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Your search keyword '"Ryssel, H"' showing total 16 results
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16 results on '"Ryssel, H"'

1. Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices

Author

Strobel, S., Bauer, A.J., Beichele, M., Ryssel, H., and Publica

Subjects
Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials
Abstract

PMOS devices with and without nitrogen implant into the gate electrode before doping with boron and with nitridation of the gate oxide were manufactured. The influence of nitrogen on the penetration of boron ions into the substrate through ultra-thin gate oxides was investigated by electrical and SIMS measurements. Boron diffusion can be effectively prevented by high nitrogen concentrations located immediately above the gate oxide and within the polysilicon gate electrode.

Published
2001
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11. Ultrasonic transducer with silicon: a well known material with new applications

Author

Paneva, R., Temmel, G., Ryssel, H., and Publica

Subjects
ultrasonic transducer, nonlinear vibration, silicon
Abstract

The vibrations of piezoelectric driven (ZnO) thin silicon membranes up to 200 kHz are studied. Non-linear vibrations with amplitudes of several micrometers for subharmonic frequency produce considerable ultrasonic radiation. The application of the discussed structure as a liquid nebulizer is investigated. A high-order mode vibration with large amplitude is a necessary condition for the generation of surface acoustic waves in the liquid film and drop formation.

Published
1996
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15. Junction profiles of sub keV ion implantation for deep sub-quarter micron devices

Author

D. Wagner, Babak Adibi, Adrian Murrell, R. Mickevicius, R. Doherty, Majeed A. Foad, S. Simeonov, D. Sing, R. Murto, C. Ferguson, Amir Al-Bayati, V. Menisilenko, S. Tandon, A. Jian, L. Larson, Ryssel, H., Frey, L., Gyulai, J., and Glawischnig, H.

Subjects
Materials science, Silicon, business.industry, Annealing (metallurgy), systems engineering and theory, Doping, implants, ion beams, silicon, chemistry.chemical_element, Nanotechnology, Contamination, contamination, Ion implantation, chemistry, particle beam optics, instruments, Optoelectronics, ion implantation, Wafer, production, business, Boron, p–n junction, throughput
Abstract

Ultra shallow junctions

Published
2003
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16. Enhanced Velocity Overshoot and Transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - Predictions for Deep Submicron Devices

Author

A.G.R. Evans, G. Braithwaite, John R. Barker, M.J. Palmer, Terry E. Whall, Asen Asenov, M. J. Prest, Jeremy R. Watling, Savas Kaya, Evan H. C. Parker, Y.P. Zhao, A.M. Waite, Ryssel, H., Wachutka, G., and Grunbacher, H.

Subjects
Electron mobility, Materials science, Fabrication, business.industry, Transconductance, PMOS logic, Silicon-germanium, Length measurement, chemistry.chemical_compound, chemistry, Velocity overshoot, Electronic engineering, Optoelectronics, Electrical measurements, TJ, business
Abstract

Electrical measurements have been carried out on Si/Si 0.64 Ge 0.36/Si pMOS devices and it is demonstrated that enhanced low field carrier mobilities lead to concomitant and substantial enhancements in velocity overshoot and transconductance at deep submicron channel lengths. This provides considerable motivation for incorporating SiGe into Si MOS technology.

Published
2001
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