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We present a detailed investigation of the dynamics of impurity-trapped excitons in CaF 2 :Yb 2+ using transient photoluminescence enhancement induced via a two-frequency, sequential excitation process employing a UV optical parametric amplifier (OPA) synchronized to an infrared free electron laser (FEL). The temporal behaviour is well approximated by a multi-level rate equation model as relaxation between excited states of the exciton as well as a small contribution from local lattice heating by the FEL which becomes evident due to the 40 cm −1 splitting of the exciton excited states giving rise to the transient photoluminescence enhancement itself.

Materials that luminesce after excitation with ionizing radiation are extensively applied in physics, medicine, security, and industry. Lanthanide dopants are known to trigger crystal scintillation through their fast d–f emissions; the same is true for other important applications as lasers or phosphors for lighting. However, this ability can be seriously compromised by unwanted anomalous emissions often found with the most common lanthanide activators. We report high-resolution X-ray-excited optical (IR to UV) luminescence spectra of CaF2:Yb and SrF2:Yb samples excited at 8949 eV and 80 K. Ionizing radiation excites the known anomalous emission of ytterbium in the CaF2 host but not in the SrF2 host. Wave function-based ab initio calculations of host-to-dopant electron transfer and Yb2+/Yb3+ intervalence charge transfer explain the difference. The model also explains the lack of anomalous emission in Yb-doped SrF2 excited by VUV radiation.

Materials that luminesce after excitation with ionizing radiation are extensively applied in physics, medicine, security, and industry. Lanthanide dopants are known to trigger crystal scintillation through their fast d-f emissions; the same is true for other important applications as lasers or phosphors for lighting. However, this ability can be seriously compromised by unwanted anomalous emissions often found with the most common lanthanide activators. We report high-resolution X-ray-excited optical (IR to UV) luminescence spectra of CaF

The excited-state structure of impurity-trapped excitons are measured in a multisite system. We use a two-color (UV-IR) pulsed photoluminescence enhancement technique, which probes the interlevel transitions and dynamics of impurity-trapped excitons in doped insulating phosphor materials. The technique is applied to NaMgF${}_{3}$:Yb${}^{2+}$, which exhibits emission from two charge-compensation centers with peaks at 22300 cm${}^{\ensuremath{-}1}$ (448 nm) and 24000 cm${}^{\ensuremath{-}1}$ (417 nm). The observed photoluminescence enhancement is caused by a combination of intraexcitonic excitation and electron trap liberation. The electron traps are inferred to have a depth of approximately 800 cm${}^{\ensuremath{-}1}$.

Ytterbium-doped wide-bandgap fluoride crystals CaF2, SrF2 and NaMgF3 have been measured using x-ray absorption near edge structure (XANES) on the L3 edge to determine the ratio of trivalent to divalent Yb ions present in the crystals. This study improves upon previous XANES measurements of dopant ion valency by taking into account the x-ray emission transition probabilities for the divalent and trivalent species instead of simply assuming that the relative concentrations may be determined by the ratio of the x-ray excitation band areas. Trivalent to divalent ratios as high as 5 are inferred even at low total dopant ion concentrations of 0.05 mol% Yb.