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An in vivo atlas of human subcortical nuclei involved in reinforcement learning. Based on a midspace template derived from Human Connectome Project structural MRI.

This is a correction notice for article bjaa041 (DOI: https:// doi.org/10.1093/chemse/bjaa041), published 20 June 2020. An incorrect version of the caption to Figure 5 was mistakenly included in the published paper. An updated version is given below. Neither the data nor the paper's conclusions were affected by this correction. The authors sincerely apologize for the error. (A) Correlations between the 3 principal components with respect to changes in 3 chemosensory modalities (i.e., taste, smell, and chemesthesis). Shades of gray indicate positive correlation, whereas shades of red indicate negative correlations. White denotes no correlation. (B) Clusters of participants identified by k-means clustering. The scatterplot shows each participant's loading on dimension 1 (degree of smell and taste loss, PC1 on x-Axis) and dimension 2 (degree of chemesthesis loss, PC2 on y-Axis). Based on the centroid of each cluster, participants in cluster 1 (blue, N = 1767; top left) are generally characterized by significant smell, taste and chemesthesis loss. Participants in cluster 2 (orange, N = 1724; bottom center) are generally characterized by ratings that reflect smell/taste loss with preserved chemesthesis. Loadings for participants in cluster 3 (green, N = 548; right side) are generally characterized by reduced smell and taste loss, and preserved chemesthesis.

The degradation mechanism of ZnO varistors under dc bias is investigated from the viewpoint of the time dependence of leakage current under dc biasing, the voltage‐current characteristics, and the thermally stimulated current and dielectric properties before and after dc biasing test. The experimental results are analyzed on the basis of the Schottky barriers which control current transport in varistors at the grain boundary regions. The increase in leakage current is expressed as J = A exp (Bt0.3) ( J is the leakage current; A and B are constants, and t the biasing time) and is attributed to the deformation of the Schottky barriers. The deformation corresponds to the lowering of the barrier height and decrease in the depletion width. This is due to the uneven distribution of positive charges caused by the migration of donor ions. In case of the degradation of varistors under long term dc bias, the deformation is mainly due to decrease in the depletion width. Taking into account the electric field due to positive charges and the skew of Fermi level, etc., the asymmetrical deformation can be also explained as a phenomenon due to surplus positive charges, formed in the reverse‐biased depletion layer.