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Background Outcomes for chronic obstructive pulmonary disease (COPD) patients with persistent hypercapnic respiratory failure are improved by long-term home non-invasive ventilation (NIV). Provision of home-NIV presents clinical and service challenges. The aim of this study was to assess outcomes of home-NIV in hypercapnic COPD patients managed remotely. Methods Retrospective analysis of a dataset of 46 COPD patients with persistent hypercapnic respiratory failure who commenced home-NIV managed by two-way remote monitoring (Lumis, AirView, ResMed) between February 2017 and January 2018. The primary outcome of this study was time to readmission or death at 12 months in patients receiving home-NIV versus a retrospectively identified control cohort of 27 patients with hypercapnic COPD who had not been referred for home-NIV. Results The median time to readmission or death was significantly prolonged in patients who commenced home-NIV (median 160 days, 95% CI 69.38-250.63) versus the control cohort (66 days, 95% CI 21.9-110.1; p Conclusion These findings confirm the benefits of home-NIV in clinical practice and support the use of two-way remote monitoring as a feasible solution to managing the delivery of home-NIV for COPD patients with persistent hypercapnia. KEY MESSAGES What is the key question? Do COPD patients with persistent hypercapnia benefit from remotely monitored home-NIV? What is the bottom line? Home-NIV supported with two-way remote monitoring prolonged time to readmission or death within 12 months in patients with hypercapnic COPD. Why read on? This is the first study to show that two-way remote monitoring can be an effective and realistic solution in providing access to home-NIV for COPD patients at the necessary scale. The COVID-19 pandemic has mandated remote-management for respiratory care where feasible. This study demonstrates feasibility, safety and efficacy of a remote-management service model for COPD-NIV and provides playbook for adoption by other clinical teams.

10.1021/cm4037023 Porous GaN polycrystalline layers with n-type conduction characteristics were catalytically grown from Mg films formed by decomposition of a Mg 2N3 precursor typically employed for activating p-type conduction in GaN. After being exposed to oxygen, the Mg film oxidized to a polycrystalline high-? oxide between the ohmic alloy interlayer contact and the porous GaN, while maintaining a clean interface. Electrical measurements on devices coupled to composition analysis and electron microscopy of the component layers confirm that a MOS-type porous GaN diode on silicon can be formed by chemical vapor deposition in a single growth regime.

Here we present the fabrication of LEDs based on porous GaN produced by chemical vapor deposition (CVD) and reviewed the work done that allowed demonstrating p-n junction rectifiers and MOS diodes in a simple manner and without involving post-growth steps to induce porosity. p-n junction rectifiers exhibited stable rectification in the range ±1¿±5 V, with very stable values of current with time. MOS diodes were fabricated in a single growth step formed by a MgO dielectric interlayer in between Mg-doped porous GaN and a Mg-Ga metallic alloy. Despite the high resistivity observed in the LEDs fabricated, that induced a turn on voltage of ¿13 V, the emission consisted only in one peak centered at 542 nm. Our porous GaN films exhibit random porosity when compared to arrays of nanostructures, however, their easy deposition over large areas without dominating leakage currents is promising for wideband gap applications.