Search

Windows integrated with PV can provide electrical energy and control the energy flow (heat and light) through the windows. With the objective of evaluate the potential application of window integrated PV in southwest China, the performance of silicon PV windows was comprehensively studied. A test unit was developed to monitor the performance of window integrated PV, then a validated comprehensive approach integrated with heat transfer, optical, electrical and building simulation model was used to comprehensively evaluate the performance of the window integrated PV under various climatic conditions in southwest China. The effects of the air gap on window thermal performance, window orientation, different window-to-wall ratio and coverage ratio of PV cells are evaluated. It was found that a maximum energy saving could be achieved, when the PV window is installed on the south facing facade with a PV cell coverage ratio of 0,87, air gap of 9 mm between the two glazing panes. It was found that a maximum energy saving of 983 kWh was achieved in Lhasa. A highest energy saving ratio of 83% was found in Kunming. The window integrated PV shows good energy saving potential under different climatic conditions in Southwest China.

In this work, boron paste was coated on the silicon surface by spin-coating method, and the boron-doped emitter and phosphorus-doped back surface field were fabricated in one co-diffusion process, because the boron paste acted as a barrier during phosphorus diffusion. Then, n-PERT (Passivated Emitter Rear Totally-diffused cell) solar cells were successfully prepared by this B/P co-diffusion method with the front efficiency of 20.41% and the back efficiency reaching 18.32%. It was demonstrated that the emitter and back surface field formed a good passivation layer on top by thermal oxidation respectively, which enabled open-circuit voltage to reach 648.7 mV. It should be emphasized that the whole process was effectively simplified compared with the conventional process of n-PERT solar cells. Thus, these first results indicate that B/P co-diffusion might be a promising alternative method for mass production of the n-PERT solar cells. g

PERC solar cell passivated on the backside with AlOx and SiNx was introduced to construct the perovskite/silicon four-terminal tandem solar cell, because of its outstanding spectral response at the long wavelength region and much lower cost than SHJ and IBC. Different from the vast majority of the related reports, which were focused on the improvement of perovskite top cell, the silicon bottom cell was optimized here to promote the tandem efficiency. The central wavelength of antireflection was adjusted to further reduce the reflectance and enhance the spectral response of PERC cell in long wavelengths, in order to make the most of long-wavelength light transmitted through the perovskite top cell. Along with the increase of central wavelength, the external quantum efficiency of PERC cell at near-infrared wavelengths increases resulting in better short circuit current density and photoelectric conversion efficiency when filtered by the perovskite cell. A tandem efficiency gain of 0.07% (abs.) has been achieved. This report provides a facile way to improve the efficiency of perovskite/silicon four-terminal tandem solar cell based on the optimization of long-wavelength spectral response.

Reactive ion etching technology was combined with passivated emitter & rear cell technology to reduce the reflectance and transmittance of incident light and improve the spectral response of polycrystalline silicon solar cell. Preconditioning with acid solution can induce the formation of worm-like structures on the front surface, which could bring about the reduction of reflectance and enhancement of spectral response in the visible range. Optimization of the capping layer thickness on the rear side can enhance the internal reflection, which will decrease the transmittance and promote the spectral response in long wavelength range.

Interfaces have a significant impact on the performance of perovskite solar cells. This work investigated the influence of hole transport material/metal contact interface on photovoltaic behaviours of perovskite solar devices. Different hole material/metal contact interfaces were obtained by depositing the metal under different conditions. High incident kinetic energy metal particles were proved to penetrate and embed into the hole transport material. These isolated metal particles in hole transport materials capture holes and increase the apparent carrier transport resistance of the hole transport layer. Sample temperature was found to be of great significance in metal deposition. Since metal vapour has a high temperature, the deposition process accumulated a large amount of heat. The heat evaporated the additives in the hole transport layer and decreased the hole conductivity. On the other hand, high temperature may cause iodization of the metal contact.

Through simulation with PC1D software, it comes to a conclusion that low reflectance is essential to realize better photovoltaic performance, especially Jsc. Therefore, MACE texturing technology and double-layer antireflection coating were employed to reduce the reflectance of DWS polycrystalline silicon wafer. In order to inhibit the higher surface recombination velocity induced by submicrostructure texture, thermally grown oxide was introduced to enhance the passivation quality of SiNx:H. Finally, compared with the solar cell fabricated with traditional acid-based etching method, an efficiency gain of up to 0.49% (abs.) has been achieved.

This paper mainly studied the correlation between the PID attenuation of P/N type bifacial cell and the adhesive film. At present, with the development of glass-glass module technology and bifacial cell technology, glass-glass bifacial module is an important direction of industry development. Currently P type monocrystal PERC bifacial cell and N-type PERT bifacial cell are typical representatives of the bifacial technology. However, the PID problem of bifacial cell is more serious than single side cell. How to solve the bifacial cell PID problem has become a hot topic. We mainly studied the correlation between two different adhesive film (EVA&POE), and the anti-pid attenuation ability of P/N type bifacial cell. The influence of the water vapor transmission rate and resistivity of the adhesive film on PID attenuation of bifacial cell was studied. After PID 192h test, For P type, power decay of the front side is lower than rear side, while for N type cell, power dacy of the rear side is lower than front side. Both P&N type bifacial cell module with POE are much better than with EVA. For POE, recipe adjustment affects PID performance obviously.