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Many buildings in the present scenario have irregular configurations both in plan and elevation. This in future may subject to devastating earthquakes. In case, it is necessary to identify the performance of the structures to withstand against disaster for both new and existing one. The present paper made an attempt to study two kinds of irregularities in the building models namely plan irregularity with geometric and diaphragm discontinuity and vertical irregularity with setback and sloping ground. These irregularities are created as per clause 7.1 of IS 1893 (part1)2002 code. In Oder to identify the most vulnerable building among the models considered, the various analytical approaches are performed to identify the seismic demands in both linear and nonlinear way. It is also examined the effect of three different lateral load patterns on the performance of various irregular buildings in pushover analysis. This study creates awareness about seismic vulnerability concept on practicing engineers.

We report for the first time large photoresponse in a single NW of the charge transfer complex Cu:TCNQ. We fabricate a metal-semiconductor-metal device with a single NW and focus ion beam deposited Pt. We observe large photocurrent even at zero bias. The spectral dependence of the photoresponse follows the main absorption at ~ 405 nm which has the primarily responsible for photogenerated carriers. We have quantitatively analyzed the bias dependent photocurrent by a model of two back to back Schottky diodes connected by a series resistance. The observation shows that the large photoresponse of the device primarily occurs due to the reduction of the barrier at the contact regions due to illumination along with the photoconductive contribution. There is also a bias driven reduction of the nanowire resistance that is a unique feature for the material., Comment: 24 pages, 5 figures