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We discuss the conversion of a pure screw dislocation into a helical (single helix) dislocation through absorption of vacancies. These helical dislocations having some edge and mostly screw character can pair up through attractive interaction to form a double helix. This attractive interaction between two helices is derived through the edge component of mixed dislocations and from the presence of vacancy jogs. Recent results on the growth of GeS [] and PbS [] nanowires with Eshelby twist showed large disagreements between experimental and theoretical Burgers vectors for these crystal structures, which can be resolved by introducing the double helix of screw dislocations.

Growth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth. Supplementary Information The online version contains supplementary material available at 10.1186/s11671-021-03505-2.

One-dimensional nanostructures with controllable morphologies and defects are appealing for use in nanowire devices. This paper details the influence of colloidal magnetite iron oxide nanoparticle seeds to regulate the radial dimension and twin boundary formation in Ge nanowires grown through a liquid-injection chemical vapor deposition process. Control over the mean nanowire diameter, even in the sub-10 nm regime, was achieved due to the minimal expansion and aggregation of iron oxide nanoparticles during the growth process. The uncommon occurrence of heterogeneously distributed multiple layer {111} twins, directed perpendicular to the nanowire growth axis, were also observed in 〈111〉-directed Ge nanowires, especially those synthesized from patterned hemispherical Fe3O4 nanodot catalysts. Consecutive twin planes along 〈111〉-oriented nanowires resulted in a local phase transformation from 3C diamond cubic to hexagonal 4H allotrope. Localized polytypic crystal phase heretostructures were formed along 〈111〉-oriented Ge nanowire using magnetite nanodot catalysts.

This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventional-type NW-FETs with doped NW segments as source and drain electrodes, and, finally, two new concepts that enable steep turn-on characteristics, namely, NW impact ionization FETs and tunnel NW-FETs. As it turns out, NW-FETs are, to a large extent, determined by the device geometry, the dimensionality of the electronic transport, and the way of making contacts to the NW. Analytical as well as simulation results are compared with experimental data to explain the various factors impacting the electronic transport in NW-FETs.

A self-organized network of inorganic synapses provides a unique approach toward the development of brain-like computers., MANA E-BULLETIN. 17 (2014)

We describe a new catalyst for group IV nanowire heterostructures, based on alloying Ag with Au, that combines the ability to control catalyst phase and nanowire structure with good environmental stability. Compared to other alloy catalysts, we show a higher oxidation resistance of AgAu and more consistent crystal shapes and catalyst/nanowire orientation relationships during growth. We show that AgAu catalysts are also stable against diffusion during growth, making them capable of forming long nanowires with uniform diameters. Furthermore, we demonstrate the growth of compositionally abrupt Si/Ge heterojunctions with good reproducibility and yield, switching individual nanowires between vapor-liquid-solid and vapor-solid-solid growth to optimize growth rates by control of the catalyst state. The stability and properties of AgAu catalysts potentially open up a promising and practical route toward control of group IV heterostructure nanowires.

II-VI nanowires offer a unique combination of properties for developing blue/UV optoelectronic devices. Key to realizing this potential is managing the nanowire growth process to ensure appropriate properties are realized. Taking ZnSe as an example, we report on the influence of growth conditions (namely, growth temperature and constituent flux ratio) on optimizing the luminescence response. It is shown that native defects ultimately dictate properties including steady state photoluminescence, ultrafast optical response and even nonlinear behavior. We demonstrate how careful control over materials can enable the realization of a state of the art photo-detector based on such nanowires. ©The Electrochemical Society. 28 193 202 Sponsors: Luminescence and Display Materials Dielectric Science and Technology Conference code: 82950 Cited By :2

International audience; The phenomenon of supercooling in metals-that is, the preservation of a disordered, fluid phase in a metastable state well below the melting point(1)-has led to speculation that local atomic structure configurations of dense, symmetric, but non-periodic packing act as the main barrier for crystal nucleation(2,3). For liquids in contact with solids, crystalline surfaces induce layering of the adjacent atoms in the liquid(4,5) and may prevent or lower supercooling(6). This seed effect is supposed to depend on the local lateral order adopted in the last atomic layers of the liquid in contact with the crystal. Although it has been suggested that there might be a direct coupling between surface-induced lateral order and supercooling(6), no experimental observation of such lateral ordering at interfaces is available(6). Here we report supercooling in gold-silicon (AuSi) eutectic droplets, enhanced by a Au-induced (6 x 6) reconstruction of the Si(111) substrate. In situ X-ray scattering and ab initio molecular dynamics reveal that pentagonal atomic arrangements of Au atoms at this interface favour a lateral-ordering stabilization process of the liquid phase. This interface-enhanced stabilization of the liquid state shows the importance of the solid-liquid interaction for the structure of the adjacent liquid layers. Such processes are important for present and future technologies, as fluidity and crystallization play a key part in soldering and casting, as well as in processing and controlling chemical reactions for microfluidic devices or during the vapour-liquid-solid growth of semiconductor nanowires