1. In-doped Sb nanowires grown by MOCVD for high speed phase change memories
- Author
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S. Selmo, Raimondo Cecchini, Claudia Wiemer, Marco Fanciulli, Dionyz Pogany, Massimo Longo, M. Rigato, Enzo Rotunno, L. Lazzarini, and Alois Lugstein
- Subjects
Materials science ,business.industry ,Phase change memoriesNanowiresMOCVDIn-SbTEMXRD ,lcsh:Electronics ,Doping ,Nanowire ,lcsh:TK7800-8360 ,Chemical vapor deposition ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Phase-change memory ,Phase change ,lcsh:Technology (General) ,lcsh:T1-995 ,Optoelectronics ,Metalorganic vapour phase epitaxy ,Electrical and Electronic Engineering ,business ,Reset (computing) ,Voltage - Abstract
We investigated the Phase Change Memory (PCM) capabilities of In-doped Sb nanowires (NWs) with diameters of (20-40) nm, which were self-assembled by Metalorganic Chemical Vapor Deposition (MOCVD) via the vapor-liquid-solid (VLS) mechanism. The PCM behavior of the NWs was proved, and it was shown to have relatively low reset power consumption (~ 400 μW) and fast switching capabilities with respect to standard Ge-Sb-Te based devices. In particular, reversible set and reset switches by voltage pulses as short as 25 ns were demonstrated. The obtained results are useful for understanding the effects of downscaling in PCM devices and for the exploration of innovative PCM architectures and materials. Keywords: Phase change memories, Nanowires, MOCVD, In-Sb, TEM, XRD
- Published
- 2019
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