1. Magnetic and optical properties, electrical behavior and conduction mechanism study by CBH model of Cu(HAsO3).Te(OH)6 compound
- Author
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Gouti, Imen, Martínez-Blanco, David, García-Granda, Santiago, Khirouni, Kamel, Litaiem, Hejer, Ministère de l’Enseignement Supérieur et de la Recherche Scientifique (Tunisie), Ministerio de Economía y Competitividad (España), and Universidad de Oviedo
- Subjects
Paramagnetic ,CuAsTe ,Optical band gap ,Mechanics of Materials ,Dielectric properties ,Mechanical Engineering ,General Materials Science ,Condensed Matter Physics - Abstract
The copper hydrogeno-arsenite tellurate material (CuAsTe) was synthesized and its magnetic properties were investigated. Thermal analyses revealed that no mass loss was recorded before 480 K. Additionally, in this current work, electrical properties based on the impedance measurements were determined. The complex impedance diagram at different temperatures demonstrated a single semicircle, implying that the response originated from a single capacitive element corresponding to the grains. The thermal evolution of the conductivity ¿dc displayed an Arrhenius type behavior and suggested that this material is an ionic protonic conductor at high temperature whereas the ¿ac conductivity was indicative that the conduction mechanism is ensured by the correlated barrier hopping (CBH) model. The variation of M¿ versus frequency proved to be a thermally activated dielectric relaxation process. Notably, we specified determined the direct optical band gap Eg = 2.3 eV in order to characterize the optical properties., This work is supported by the Ministry of the Higher Education and Research of Tunisia and Spanish MINECO MAT2013-40950-R and ERDF for financial support. We are deeply grateful to Dr. Mohammed Said Abdelbaky from the faculty of chemistry university of Oviedo Spain for his constant support as far as different manipulations are concerned. We are equally indebted the English teacher Jawaher Zekri from the faculty of sciences of Sfax for her constant help concerning the language correction.
- Published
- 2022
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