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Strongly correlated states are commonly emerged in twisted bilayer graphene (TBG) with magic-angle, where the electron-electron (e-e) interaction U becomes prominent relative to the small bandwidth W of the nearly flat band. However, the stringent requirement of this magic angle makes the sample preparation and the further application facing great challenges. Here, using scanning tunneling microscopy (STM) and spectroscopy (STS), we demonstrate that the correlation-induced symmetry-broken states can also be achieved in a 3.45{\deg} TBG, via engineering this non-magic-angle TBG into regimes of U/W > 1. We enhance the e-e interaction through controlling the microscopic dielectric environment by using a MoS2 substrate. Simultaneously, the bandwidth of the low-energy van Hove singularity (VHS) peak is reduced by enhancing the interlayer coupling via STM tip modulation. When partially filled, the VHS peak exhibits a giant splitting into two states flanked the Fermi level and shows a symmetry-broken LDOS distribution with a stripy charge order, which confirms the existence of strong correlation effect in our 3.45{\deg} TBG. Our result paves the way for the study and application of the correlation physics in TBGs with a wider range of twist angle.

Nickel ditelluride (NiTe2), a new discovered type-II Dirac semimetal whose Dirac node lies close to its Fermi level, is expected to exhibit exotic phenomena including Lifshitz transition and superconductivity. As we know, defects are inevitable for transition metal dichalcogenides and have significant impacts on the optical and electronic properties. However, the systematic study of defects in NiTe2 is still lack. Here, by using high-resolution scanning tunneling microscopy combined with first-principles calculations, the point defects including the vacancy, intercalation and antisite defects in NiTe2 are systematically investigated. We identified five main types native defects and revealed that the growth condition could affect the type of native defects. By controlling the ratio of ingredient during synthesis, the types of point defects are expected to be manipulated, especially antisite defects. Additionally, we find native defects could slightly dope the topological surface states. Our results provide a facile way to manipulate defects for future optimizing the electronic properties of NiTe2 and other related materials., Comment: 17 pages, 4 figures, 1 table