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Quasi-two-dimensional (Quasi-2D) van der Waals (vdW) materials can be mechanically or chemically exfoliated down to monolayer because of their strong intralayer bonding and the weak interlayer vdW interaction. Thanks to this unique property, one can often find exotic thickness-dependent electronic properties from these quasi-2D vdW materials, which can lead to band gap opening, emerging superconductivity, or enhanced charge density waves with decreasing thickness. Surface-sensitive scanning tunneling microscopy (STM) can provide direct observation of structural and electronic characteristics of such layered materials with atomic precision in real space. However, it is very challenging to preserve the intrinsic surfaces of air-sensitive quasi-2D materials between preparation and measurement. In addition, vdW 2D crystals after exfoliation are extremely hard to explore with a typical STM setup due to their small size (< 10 {\mu}m). Here, we present a straightforward method compatible with any STM setup having optical access: (1) exfoliating and/or stacking layered materials in a glove box, (2) transferring them to an ultra-high vacuum STM chamber using a suitcase without exposure to air, and (3) navigating surface to locate exfoliated vdW 2D flakes with different thicknesses. We successfully demonstrated that the clean surfaces of the air-sensitive Fe$_3$GeTe$_2$ can be effectively protected from unwanted oxidation during transfer. Furthermore, our method provides a simple but useful way to access a specific tiny stack of layered materials without any ex-situ fabrication processes for STM navigation. Our experimental improvement will open up a new way to investigate air-sensitive layered vdW materials with various thicknesses via surface-sensitive techniques including STM., Comment: 5 pages, 5 figures

The Majorana zero-energy modes (MZMs) residing at the boundary of topological superconductors have attracted a great deal of interest recently, as they provide a platform to explore fundamental physics such as non-Abelian statistics, as well as fault-tolerant quantum computation. Period doubling of Shapiro steps in a Josephson junction under microwave irradiation has been regarded as strong evidence for the emergence of the MZMs at the junction edges. However, questions remain as to how the Shapiro steps respond to the presence of a 4��-periodic Josephson current. In this study, we investigated the characteristic features of Shapiro steps with respect to the ratio (��) of the 4��-periodic current to the topologically trivial 2��-periodic one, as well as the reduced microwave frequency (��) and McCumber parameter (��) of the junction. Our analysis reproduced Shapiro steps similar to those observed experimentally for specific parameter sets of ��,�� ({\lesssim 0.1}), and �� ({gtrsim 1.0}). Full suppression of the first lobe of the n=1 step guarantees the presence of a 4��-periodic Josephson current.In addition, we discuss the range of �� and �� needed for full suppression of the first lobe of the {n=1} step, even for small �� ({

NiO thin films with various strains were grown on SrTiO3 (STO) and MgO substrates using a pulsed laser deposition technique. The films were characterized using an x-ray diffractometer, atomic force microscopy, and infrared reflectance spectroscopy. The films grown on STO (001) substrate show a compressive in-plane strain which increases as the film thickness is reduced, resulting in an increase of the NiO phonon frequency. On the other hand, a tensile strain was detected in the NiO film grown on MgO (001) substrate which induces a softening of the phonon frequency. Overall, the variation of in-plane strain from -0.36% to +0.48% yields the decrease of the phonon frequency from 409.6 cm-1 to 377.5 cm-1 which occurs due to the ~1% change of the inter-atomic distances. The magnetic exchange -driven phonon splitting Delta(W) in three different sample, with relaxed (i.e. zero) strain, 0.36% compressive and 0.48% tensile strain was measured as a function of temperature. The Delta(W) increases on cooling in NiO relaxed film as in the previously published work on a bulk crystal. The splitting increases on cooling also in 0.48% tensile strained film, but Delta(W) is systematically 3-4 cm-1 smaller than in relaxed film. Since the phonon splitting is proportional to the non-dominant magnetic exchange interaction J1, the reduction of phonon splitting in tensile-strained film was explained by a diminishing J1 with lattice expansion. Increase of Delta(W) on cooling can be also explained by rising of J1 with reduced temperature.

Monolayer and few-layer phosphorene are anisotropic quasi-two-dimensional (quasi-2D) van der Waals (vdW) semiconductors with a linear-dichroic light-matter interaction and a widely-tunable direct-band gap in the infrared frequency range. Despite recent theoretical predictions of strongly-bound excitons with unique properties, it remains experimentally challenging to probe the excitonic quasiparticles due to the severe oxidation during device fabrication. In this study, we report observation of strongly-bound excitons and trions with highly-anisotropic optical properties in intrinsic bilayer phosphorene, which are protected from oxidation by encapsulation with hexagonal boron nitride (hBN), in a field-effect transistor (FET) geometry. Reflection contrast and photoluminescence spectroscopy clearly reveal the linear-dichroic optical spectra from anisotropic excitons and trions in the hBN-encapsulated bilayer phosphorene. The optical resonances from the exciton Rydberg series indicate that the neutral exciton binding energy is over 100 meV even with the dielectric screening from hBN. The electrostatic injection of free holes enables an additional optical resonance from a positive trion (charged exciton) ~ 30 meV below the optical bandgap of the charge-neutral system. Our work shows exciting possibilities for monolayer and few-layer phosphorene as a platform to explore many-body physics and novel photonics and optoelectronics based on strongly-bound excitons with two-fold anisotropy., Comment: 20 pages, 4 figures, Sangho Yoon, Taeho Kim contributed equally to this work

The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric permittivity of NiO films becomes dominant and the more defective films, which were grown at low temperatures show a drastical increase in the dielectric constant up to room temperature. While the atomically-ordered film, which was grown at high temperature doesn't show any considerable change in the dielectric constant in the range from 10 to 300 K. Below 100 K, the effect of strain on the dielectric constant becomes clear. An increase in dielectric permittivity is observed in the strained films while the relaxed film doesn't show any remarkable deviation from its bulk value. The low-temperature dielectric behavior of NiO thin film can be interpreted based on the effect of strain on the lattice dynamics of rocksalt binary oxides.

Josephson vortices in naturally stacked Bi-2212 tunneling junctions display rich dynamic behavior that derives from the coexistence of three basic states: static Josephson vortex lattice, coherently moving lattice, and incoherent quasiparticle tunneling state. Rich structure of hysteretic branches observed in the current-voltage characteristics can be understood as combinatorial combinations of these three states which are realized in different junctions and evolve separately with magnetic field and bias current. In particular, the multiple Josephson-vortex-flow branches at low bias currents arise from the individual depinning of Josephson vortex rows in each junction., Comment: Submitted to Europhysics Letters