1. Infrared Absorption and Its Sources of CdZnTe at Cryogenic Temperature
- Author
-
Hiroshi Maeshima, Kosei Matsumoto, Yasuhiro Hirahara, Takao Nakagawa, Ryoichi Koga, Yusuke Hanamura, Takehiko Wada, Koichi Nagase, Shinki Oyabu, Toyoaki Suzuki, Takuma Kokusho, Hidehiro Kaneda, and Daichi Ishikawa
- Subjects
FOS: Physical sciences ,CDTE ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Physics and Astronomy ,absorption coefficient ,infrared transmittance ,Materials Chemistry ,CdZnTe ,Electrical and Electronic Engineering ,Astrophysics - Instrumentation and Methods for Astrophysics ,cryogenic material ,Instrumentation and Methods for Astrophysics (astro-ph.IM) - Abstract
To reveal the infrared absorption causes in the wavelength region between electronic and lattice absorptions, we measured the temperature dependence of the absorption coefficient of $p$-type low-resistivity ($\sim 10^2~{\rm \Omega cm}$) CdZnTe crystals. We measured the absorption coefficients of CdZnTe crystals in four-wavelength bands ($\lambda=6.45$, 10.6, 11.6, 15.1$~\mu$m) over the temperature range of $T=8.6-300$ K with an originally developed system. The CdZnTe absorption coefficient was measured to be $\alpha=0.3-0.5$ ${\rm cm^{-1}}$ at $T=300$ K and $\alpha=0.4-0.9$ ${\rm cm^{-1}}$ at $T=8.6$ K in the investigated wavelength range. With an absorption model based on transitions of free holes and holes trapped at an acceptor level, we conclude that the absorption due to free holes at $T=150-300$ K and that due to trapped-holes at $T, Comment: Accepted for publication in Journal of Electronic Material, 30 pages, 6 figures, 5 tables
- Published
- 2022