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With molecular beam epitaxy and topotactic chemical reaction, we prepared NdFeAs(O,H) epitaxial thin films with various hydrogen concentrations on 5{\deg} vicinal cut MgO substrates. By measuring the resistivities along the longitudinal and transversal directions, the ab plane and the c axis resistivities (\{rho}_ab and \{rho}_c) were obtained. The resistivity anisotropy {\gamma}_\{rho}=\{rho}_c \ \{rho}_ab of NdFeAs(O,H) with various hydrogen concentrations was compared with that of NdFeAs(O,F). At the H concentrations which led to superconducting transition temperatures Tc over 40 K, {\gamma}_\r{ho} recorded ~100-150 at 50 K. On the other hand, a low {\gamma}_\{rho} value of 9 was observed with the mostly doped sample. The exponent \{beta} of the ab plane resistivity obtained by fitting a power law expression \{rho}_{ab}(T)=\{rho}_0+AT^\{beta} to the data was close to unity down to low temperature in the vicinity where the second antiferromagnetic phase locates, which may be related to the quantum critical point discussed at the over-doped side of the phase diagram., Comment: Appeared in Physical. Rev. Materials

Surface defects on nanowire structured silicon (Si) surfaces prepared by metal assisted chemical etching generate trap states in the band gap and thus minimize the efficiency of the future device. Electropolishing treatment of Si surfaces results in a reduced surface defect density. Since the interband photoluminescence (PL) of Si is very sensitive towards changes of the surface defect density, electropolishing treatments have been monitored by in situ PL measurements. A strong enhancement in PL intensity during the electropolishing experiment was obtained, which correlates to a reduced amount of surface trap states. The subsequent electrochemical exchange of Si H bonds by Si C bonds via methylation preserved the low defect density of the surface and prevented the formation of a native silicon oxide layer. Additional PL measurements proved the long-term stability of the methyl passivated surfaces of the Si nanowires in ambient air.

Usually hydroxyl groups present on top of oxidized silicon served as binding centers for a silanization reaction toward surface functionalization. In this study, we developed a novel surface functionalization strategy where hydroxyl functionalization on nonoxidized silicon surfaces are obtained. These surfaces were stable for several weeks even in ambient air at room temperature. This high stability indicates a strong spatial isolation of the hydroxyl groups because they keenly tend to undergo a condensation reaction, forming silicon oxide. To prove the applicability of the obtained hydroxylated silicon surface, we further modified the hydroxyl groups with a commonly used silane molecule, (3-aminopropyl)triethoxysilane (APTES). The functional amino groups of the APTES layer bonded to the surface were subsequently altered by N-maleoyl-β-alanin to generate a surface highly specific for the immobilization of thiol-containing biomolecules (like thiolated single-stranded DNA or cysteine-tagged proteins). All modification steps have been investigated by IR spectroscopic ellipsometry measurements.

A quantum critical point (QCP) is currently being conjectured for the BaFe2(As1−xPx)2 system at the critical value x c ≈ 0.3. In the proximity of a QCP, all thermodynamic and transport properties are expected to scale with a single characteristic energy, given by the quantum fluctuations. Such a universal behavior has not, however, been found in the superconducting upper critical field H c2. Here we report H c2 data for epitaxial thin films extracted from the electrical resistance measured in very high magnetic fields up to 67 Tesla. Using a multi-band analysis we find that H c2 is sensitive to the QCP, implying a significant charge carrier effective mass enhancement at the doping-induced QCP that is essentially band-dependent. Our results point to two qualitatively different groups of electrons in BaFe2(As1−xPx)2. The first one (possibly associated to hot spots or whole Fermi sheets) has a strong mass enhancement at the QCP, and the second one is insensitive to the QCP. The observed duality could also be present in many other quantum critical systems.

Ultra-fast THz detectors from superconducting YBa2Cu3O7−δ (YBCO) thin films were developed to monitor picosecond THz pulses. YBCO thin films were optimized by the introduction of CeO2 and PrBaCuO buffer layers. The transition temperature of 10 nm thick films reaches 79 K. A 15 nm thick YBCO microbridge (transition temperature—83 K, critical current density at 77 K—2.4 MA/cm2) embedded in a planar log-spiral antenna was used to detect pulsed THz radiation of the ANKA storage ring. First time resolved measurements of the multi-bunch filling pattern are presented.

Superconducting LaFeAsO1-xFx thin films were grown on single crystalline LaAlO3 substrates with critical temperatures (onset) up to 28 K. Resistive measurements in high magnetic fields up to 40 T reveal a paramagnetically limited upper critical field mu{0}H{c2}(0) around 77 T and a remarkable steep slope of -6.2 T K-1 near T{c}. From transport measurements we observed weak-link behavior in low magnetic fields and evidence for a broad reversible regime.

As coated conductor technology based on REBa2Cu3O7−x (REBCO, RE rare earth or Y) has evolved, so has the need to determine the critical current (Ic) performance as a function of applied magnetic field magnitude and direction on long wires. These measurement capabilities have typically only been available for short samples cut from a long wire. In the past year we have developed the capability to make these measurements on long conductors (1∼100 m). We present example results from characterization of multi‐meter YBCO conductors deposited using the pulsed laser deposition (PLD) method on textured templates of MgO produced using ion beam assisted deposition (IBAD). We show how the anisotropy of Ic as a function of position can be used to obtain information for tape processing optimization.

The preparation of biaxially textured BaFe1.8Co0.2As2 thin films has been optimized on MgO single crystals and transfered to piezoelectric (001) Pb(Mg1/3Nb2/3)0.72Ti0.28O3 substrates. By utilizing the inverse piezoelectric effect the lattice parameter of these substrates can be controlled applying an electric field, leading to a induction of biaxial strain into the superconducting layer. High electric fields were used to achieve a total strain of up to 0.05% at low temperatures. A sharpening of the resistive transition and a shift of about 0.6 K to higher temperatures was found at a compressive strain of 0.035%.