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著者人数: 12名, Accepted: 2017-11-14, 資料番号: SA1170193000

Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed

We studied the radiation hardness of 4H-SiC Schottky barrier diodes (SBD) for the light ion detection and spectroscopy in harsh radiation environments. n-Type SBD prepared on nitrogen-doped (∼4 × 1014 cm−3) epitaxial grown 4H-SiC thin wafers have been irradiated by a raster scanning alpha particle microbeam (2 and 4 MeV He2+ ions separately) in order to create patterned damage structures at different depths within a sensitive volume of tested diodes. Deep Level Transient Spectroscopy (DLTS) analysis revealed the formation of two deep electron traps in the irradiated and not thermally treated 4H-SiC within the ion implantation range (E1 and E2). The E2 state resembles the well-known Z1/2 center, while the E1 state could not be assigned to any particular defect reported in the literature. Ion Beam Induced Charge (IBIC) microscopy with multiple He ion probe microbeams (1–6 MeV) having different penetration depths in tested partly damaged 4H-SiC SBD has been used to determine the degradation of the charge collection efficiency (CCE) over a wide fluence range of damaging alpha particle. A non-linear behavior of the CCE decrease and a significant degradation of the spectroscopic performance with increasing He ion fluence were observed above the value of 1011 cm−2.

The effect of local rigid rotations of the LiNbO3 structure on the optical response has been theoretically explored and compared to experimental data obtained after irradiation with F (20-22 MeV), O (20 MeV) and Mg (39 MeV) ions. The calculations account for the main trends of the ordinary and extraordinary refractive indices measured after the initial stage of irradiation, namely, decrease in birrefringence and approximate invariance of the average refractive index. Moreover, experimental data are quantitatively consistent with a distribution function exp[-θ/θ0] for the rotation angle with respect to the trigonal (Z-axis) and isotropic azimuthal angle φ. The corresponding θ0 angle is in the range 4.6-7.0° depending on ion and energy (stopping power). The model also predicts a significant reduction in second-harmonic generation (SHG) yield with fluence, comparable although somewhat lower than found by experiment. © EDP Sciences.

In this work, a detailed analysis of the properties of a novel microdosimeter based on a synthetic single crystal diamond is reported. Focused ion microbeams were used to investigate the device spectropscopic properties as well as the induced radiation damageeffects. A diamond based Schottky diode was fabricated by chemical vapor deposition with a very thin detecting region, about 400 nm thick (approximately 1.4 μm water equivalent thickness), corresponding to the typical size in microdosimetric measurements. A 200 × 200 μm2 square metallic contact was patterned on the diamond surface by standard photolithography to define the sensitive area. Experimental measurements were carried out at the Ruder Boškovic′ Institute microbeam facility using 4 MeV carbon and 5 MeV silicon ions. Ion beam induced charge maps were employed to characterize the microdosimeter response in terms of its charge collection properties. A stable response with no evidence of polarization or memory effects was observed up to the maximum investigated ion beam flux of about 1.7 × 109 ions·cm−2·s−1. A homogeneity of the response about 6% was found over the sensitive region with a well-defined confinement of the response within the active area. Tests of the radiation damageeffect were performed by selectively irradiating small areas of the device with different ion fluences, up to about 1012 ions/cm2. An exponential decrease of the charge collection efficiency was observed with a characteristic decay constant of about 4.8 MGy and 1 MGy for C and Si ions, respectively. The experimental data were analyzed by means of GEANT4 Monte Carlo simulations. A direct correlation between the diamond damaging effect and the Non Ionizing Energy Loss (NIEL) fraction was found. In particular, an exponential decay of the charge collection efficiency with an exponential decay as a function of NIEL is observed, with a characteristic constant of about 9.3 kGy-NIEL for both carbon and silicon ions.

Interstitial N diffusion under low energy ({approx}700 eV) Ar{sup +} bombardment at 673 K in ion beam nitrided austenitic stainless steel is investigated. Ar{sup +} ion bombardment increases the N mobility in depths far beyond the ion penetration depth, resulting in an increased broadening of the N depth profile as a function of Ar{sup +} flux. This effect cannot be explained by any established mechanism of radiation-enhanced diffusion. An explanation based on quasiparticle-enhanced mobility is proposed.

Epitaxial SiC nanocrystals are fabricated by high-fluence Si-implantation into natural diamond at elevated temperatures between 760 °C and 1100 °C. Fluences under investigation range from 4.5 to 6.2 x 1017 Si cm-2 . This implantation scheme yields a buried layer rich of epitaxial aligned SiC- nanocrystals within slightly damaged diamond. The generation of a small fraction of graphitic sp2-bonds of up to 15 % in the diamond host matrix can not be avoided. Unintentional coimplantation with nitrogen results in a very high doping level of more than 1021 cm-3. Resistivity and Hall measurements in van der Pauw geometry reveal a high, thermally stable n-type conductivity with electron concentrations exceeding 1020 cm-3and mobilities higher than 2 cm2/Vs. It is supposed, that both the SiC regions as well as the diamond matrix exhibit n-type conductivity and that the electron transport occurs across the low-resistivity SiC nanograins. In the SiC nanocrystals the electrons originate from nitrogen donors whereas in diamond defects are responsible for the electron conductivity. The formation of disordered graphite, which leads to low electron mobility, is substantially reduced.