1. Electrical characterization of InGaAs ultra-shallow junctions
- Author
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Clement Merckling, Julien Penaud, Jozefien Goossens, Peter F. Nielsen, Dirch Hjorth Petersen, Peter Bøggild, Trudo Clarysse, Rong Lin, Guy Brammertz, Alireza Alian, Dennis Lin, Ole Hansen, Wilfried Vandervorst, Christoph Adelmann, Boggild, Peter/0000-0002-4342-0449, Hansen, Ole/0000-0002-6090-8323, Merckling, Clement/0000-0003-3084-2543, Adelmann, Christoph/0000-0002-4831-3159, and Brammertz, Guy/0000-0003-1404-7339
- Subjects
Electron mobility ,Materials science ,III-V semiconductors ,Magnetoresistance ,ION-IMPLANTATION ,Gallium arsenide ,chemistry.chemical_compound ,Van der Pauw method ,Hall effect ,Materials Chemistry ,magnetoresistance ,Electrical and Electronic Engineering ,Instrumentation ,carrier mobility ,Sheet resistance ,Condensed matter physics ,leakage currents ,Process Chemistry and Technology ,gallium arsenide ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Characterization (materials science) ,indium compounds ,Ion implantation ,chemistry ,semiconductor thin films ,IN0.53GA0.47AS - Abstract
In this study, we investigate the limitations to sheet resistance and Hall effect characterization of ultra-shallow junctions (USJs) in In0.53Ga0.47As. We compare conventional van der Pauw and Hall effect measurements with micro four-point probe (M4PP) and micro Hall effect methods. Due to the high carrier mobility of InGaAs, we extend the micro-Hall effect position error suppression method to also take geometrical magnetoresistance into account. We find that the conventional techniques fail to measure accurately on n(++)/p(+) USJ due to a significant leakage current, whereas the M4PP and micro Hall effect methods are able to give accurate results. Finally, we observe a significant reduction in the carrier mobility for InGaAs USJ.