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We performed an extensive study of light induced degradation experiments in PERC solar cells made of Boron doped Cz Silicon material from several experimental crystals. Strong LeTID (Light and Elevated Temperature Induced Degradation) amplitudes were found in cells originating from the top and tail part of the crystals. A statistical analysis reveals a strong correlation to the bulk concentration of Aluminium in cells originating from wafers close to the tail. Close to the top, the LeTID effect is strongly enhanced whenever Oxygen precipitation occurs in the cell process.

The efficiency record of industrial type PERC solar cells exceeded 22% at the turn of the year 2015 to 2016. Our best screen-printed PERC solar cell reached 22.04% efficiency while the best cell batch showed a very narrow efficiency distribution. A detailed electrical and optical loss analysis of those industrial type high efficiency PERC solar cells is carried out which enables further optimization and strategic improvements. A variety of characterization data allows for a recombination current density, resistance and optical loss analysis based on numerical device simulation, analytical calculations and raytracing, respectively. The main recombination losses at maximum power point (MPP) occur in the homogenous and selective diffused regions of the emitter. A series resistance loss analysis is analytically performed. The emitter contribution to the lumped series resistance dominates the series resistance losses. The optical loss analysis performed with raytracing shows main reflection and absorption losses in the rear metal layer which is partly due to the light trapping capability of the PERC cells.

With efficiencies of industrial type PERC solar cells exceeding 22% and reduced electrical and optical losses in these high efficiency cells, it becomes more and more important for manufacturers to rely on high quality silicon wafers. In this contribution, we present data of the bulk excess carrier lifetime τ bulk and a doping density independent material quality parameter at maximum power point, the material saturation current density j 0,mat , of different p-type monocrystalline silicon materials. These values are obtained by measuring the effective carrier lifetime of neighbouring wafers of different thickness and thus eliminating the surface recombination contribution. We show that j 0,mat is an adequate parameter to evaluate the bulk quality of a given material. To further validate these findings, we compare the results to PERC cell efficiencies obtained with the same material.

In this work we investigate the regeneration (permanent deactivation of light induced degradation, LID) of industrial high efficiency PERC cells. This procedure transforms the boron oxygen related defects responsible for LID into a less active state. Recently it was found that the hydrogen content in the passivation layer of boron doped Cz silicon lifetime samples plays a crucial role during regeneration. This effect is tested here on PERC cells fabricated with silicon nitride capping layers of different refractive indices and thus different compositions. We are able to confirm the results on cell level: PERC cells with high stable efficiencies of approximately 20% are achieved with an industrially applicable short regeneration step. The possibility of regeneration can be a very important factor when choosing the bulk resistivity with respect to the highest efficiency potential for PERC cells.

In this work we investigate the effect of the bulk metal contamination level in cast silicon on the electrical performance of PERC (passivated emitter and rear cell) solar cells [1] . The bulk contamination is varied in two different ways. In the first approach, cast silicon crystallized with high purity silicon feedstock and reduced metal contamination from crucible and coating is used. Second, an extended gettering step is introduced in the PERC process flow. The interstitial iron concentration is taken as a measure of the bulk metal contamination of the investigated cells. Both the higher purity cast silicon and the gettering step significantly lower the interstitial iron concentration in the resulting PERC cells. This clear positive effect is also mirrored in solar cell parameters such as the open circuit voltage UOC. In this experiment, the impact of gettering is larger than the effect which is reached by reducing the bulk metal concentration during the crystallization process. Device simulations show that most of the difference in UOC can be explained by the different interstitial iron levels while other recombination active defects might also be present.

In this work we compare experimental results of an industrial passivated emitter and rear cell (PERC) high volume pilot line production in the SolarWorld Innovations technology center with a simulation model based on 2D Sentaurus Device Simulations The PERC solar cell design shows in a well-controlled experiment a 1.1% absolute higher median efficiency compared to the aluminium back surface field (Al-BSF) solar cell reference group. We derive a calibrated simulation model by the characterization of cells and test structures. We show that the simulation model reproduces well the measured I-V data. In consequence this enables us to estimate the solar cell performance when an applied process or silicon wafer parameters will be changed for further optimization. In the second part of this study we investigate the impact of front and rear side recombination on the solar cell parameters by simulation and sensitivity analysis. We show that the quality of the local BSF underneath the local rear contacts has an important impact on the electrical solar cell performance.

We have characterized a new Magnetic Force Microscopy (MFM) probe based on an iron filled carbon nanotube (FeCNT) using MFM imaging on permalloy (Py) disks saturated in a high magnetic field perpendicular to the disk plane. The experimental data are accurately modeled by describing the FeCNT probe as having a single magnetic monopole at its tip whose effective magnetic charge is determined by the diameter of the iron wire enclosed in the carbon nanotube and its saturation magnetization 4 \pi M_s ~ 2.2 x 10^4 G. A magnetic monopole probe enables quantitative measurements of the magnetic field gradient close to the sample surface. The lateral resolution is defined by the diameter of the iron wire ~15 nm and the probe-sample separation. As a demonstration, the magnetic field gradients close to the surface of a Py dot in domain and vortex states were imaged., Comment: 6 pages, 7 figures

In addition to boron and oxygen, copper is also known to cause light-induced degradation (LID) in silicon. We have demonstrated previously that LID can be prevented by depositing negative corona charge onto the wafer surfaces. Positively charged interstitial copper ions are proposed to diffuse to the negatively charged surface and consequently empty the bulk of copper. In this study, copper out-diffusion was confirmed by chemical analysis of the near surface region of negatively/positively charged silicon wafer. Furthermore, LID was permanently removed by etching the copper-rich surface layer after negative charge deposition. These results demonstrate that (i) copper can be effectively removed from the bulk by negative charge, (ii) under illumination copper forms a recombination active defect in the bulk of the wafer causing severe light induced degradation.

A local magnetization measurement was performed with a Magnetic Force Microscope (MFM) to determine magnetization in domains of an exchange coupled [Co/Pt]/Co/Ru multilayer with predominant perpendicular anisotropy. The quantitative MFM measurements were conducted with an iron filled carbon nanotube tip, which is shown to behave like a monopole. As a result we determined an additional in-plane magnetization component of the multilayer, which is explained by estimating the effective permeability of the sample within the \mu*-method., Comment: 3 pages, 3 figures

We report on the magnetic properties of an individual, high-quality single-crystalline iron nanowire with diameter d=26 nm. The nanowire is embedded in a carbon nanotube which provides complete shielding against oxidation. Magnetization reversal is associated with domain wall formation where domain nucleation is initiated by curling. The observed nucleation fields of up to 900 mT are much higher than reported previously and nearly reach the shape anisotropy field of iron nanowires.

The magnetization reversal and switching behavior of an individual Fe-filled carbon nanotube has been measured using vibrating cantilever magnetometry. We report measurements of the magnetic field at which the 25 nanometer diameter iron core inside the nanotube reverses. The fields at which reversal occurs, characterized by an exceptionally narrow distribution (σH≤1 G at 6.3 K), are determined by thermally activated excitation over a field dependent barrier. The high precision achievable by virtue of measuring individual nanowires allows detailed quantitative understanding of magnetization reversal.

We present results on the application of an iron filled carbon nanotube (Fe-CNT) as a probe for magnetic force microscopy (MFM) in an external magnetic field. If an external field is applied parallel to the sample surface, conventional ferromagnetically coated MFM probes often have the disadvantage that the magnetization of the coating turns towards the direction of the applied field. Then it is difficult to distinguish the effect of the external field on the sample from those on the MFM probe. The Fe-CNT MFM probe has a large shape anisotropy due to the high aspect ratio of the enclosed iron nanowire. Thanks to this the direction of the magnetization stays mainly oriented along the long nanotube axis in in-plane fields up to our experimental limit of 250 mT. Thus, the quality of the MFM images remains unchanged. Apart from this, it is shown that Fe-CNT MFM probe yields a very good magnetic resolution of about 25 nm due to the small diameter of the iron filling.

Single crystal iron carbide nanowires contained in multiwalled carbon nanotubes have been prepared by aerosol-based thermal chemical vapor deposition. Investigations by transmission electron microscopy reveal the crystallographic [010] axis of the orthorhombic Fe3C nanowires to be predominantly aligned along the nanotube axis. Despite the high aspect ratio of the Fe3C nanowires, magnetic force microscopy measurements imply single domain behavior with the easy magnetic axis of the nanowires perpendicular to the wire axis. In agreement with the structural results, these findings show that the magnetic behavior is dominated by the magnetocrystalline anisotropy contribution, causing the easy axis to be along the [001] direction.

Iron-filled carbon nanotubes (Fe-CNTs) were used to prepare probes for magnetic force microscopy (MFM) by attaching them to the tips of conventional atomic force microscopy cantilevers. An optimized chemical vapor deposition process, employing a two stage furnace and ferrocene as a precursor, supplied the homogeneously filled Fe-CNTs required for the MFM probes. These can be regarded as cylindrically shaped single-domain nanomagnets that are protected from oxidation by a carbon shell. Carbon nanotubes are known to possess both great mechanical stability and elasticity, which lead to a much longer lifetime of these probes compared to conventional magnetically coated probes. It is shown that the prepared probes are suitable for magnetic imaging and so far show no sign of deterioration. Even very long nanotubes can be used as probes, which implies that they are extraordinarily stiff. It is also shown that attached Fe-CNTs can subsequently be tailored by electron-beam induced oxidation (e.g., to remove distur...