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We study conductivity of strongly disordered amorphous antimony films under high bias voltages. We observe non-linear current-voltage characteristic, where the conductivity value at zero bias is one of two distinct values, being determined by the sign of previously applied voltage. Relaxation curves demonstrate high stability of these conductivity values on a large timescale. Investigations of the antimony film structure allows to determine the percolation character of electron transport in strongly disordered films. We connect the memory effect in conductivity with modification of the percolation pattern due to recharging of some film regions at high bias voltages., Comment: final version

We experimentally investigate the magnetic field dependence of Andreev transport through a region of proximity-induced superconductivity in CoSi topological chiral semimetal. With increasing parallel to the CoSi surface magnetic field, the sharp subgap peaks, associated with Andreev bound states, move together to nearly-zero bias position, while there is only monotonous peaks suppression for normal to the surface fields. The zero-bias $dV/dI$ resistance value is perfectly stable with changing the in-plane magnetic field. As the effects are qualitatively similar for In and Nb superconducting leads, they reflect the properties of proximized CoSi surface. The Andreev states coalescence and stability of the zero-bias $dV/dI$ value with increasing in-plane magnetic field are interpreted as the joined effect of the strong SOC and the Zeeman interaction, known for proximized semiconductor nanowires. We associate the observed magnetic field anisotropy with the recently predicted in-plane polarized spin texture of the Fermi arcs surface states., final version

We experimentally investigate second-harmonic transverse voltage response to ac electrical current for a magnetic nodal-line semimetal Fe3GeTe2 (FGT). For zero magnetic field, the observed second-harmonic voltage behaves as a square of the longitudinal current, as it should be expected for nonlinear Hall effect. The magnetic field behavior is found to be sophisticated: while the first-harmonic response shows the known anomalous Hall hysteresis in FGT, the second-harmonic Hall voltage is characterized by the pronounced high-field hysteresis and flat (B-independent) region with curves touching at low fields. The high-field hysteresis strongly depends on the magnetic field sweep rate, so it reflects some slow relaxation process. For the lowest rates, it is also accomplished by multiple crossing points. Similar shape of the second-harmonic hysteresis is known for skyrmion spin textures in nonlinear optics. Since skyrmions have been demonstrated for FGT by direct visualization techniques, we can connect the observed high-field relaxation with deformation of the skyrmion lattice. Thus, the second-harmonic Hall voltage response can be regarded as a tool to detect spin textures in transport experiments.

We experimentally investigate thermoelectric response of a 100-nm-thick SnSe single crystal flake under the current-induced dc electric field. Thermoelectric response appears as a second-harmonic transverse voltage ${V}_{xy}^{2\ensuremath{\omega}}$, which reflects temperature gradient across the sample due to the Joule heating by harmonic ac excitation current ${I}_{\mathrm{ac}}$. In addition to strongly nonmonotonous dependence ${V}_{xy}^{2\ensuremath{\omega}}$, we observe that dc field direction controls the sign of the temperature gradient in the SnSe flake. We provide arguments, that electrocaloric effect is the mostly probable reason for the results obtained. Thus, our experiment can be understood as demonstration of the possibility to induce electrocaloric effect by in-plane electric field in conducting ferroelectric crystals and to detect it by thermoelectric response.

We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves we conclude that the proximity induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic field, while it is monotonous for the field which is normal to the bilayer plane., Comment: 5 pages

We experimentally study lateral electron transport between two $5\ensuremath{-}\ensuremath{\mu}\mathrm{m}$-spaced superconducting indium leads on a top of magnetic Weyl semimetal ${\mathrm{Co}}_{3}{\mathrm{Sn}}_{2}{\mathrm{S}}_{2}$. For the disordered magnetic state of ${\mathrm{Co}}_{3}{\mathrm{Sn}}_{2}{\mathrm{S}}_{2}$ crystal, we observe only the Andreev reflection in the proximity of each of the leads, which is indicative of highly transparent In-${\mathrm{Co}}_{3}{\mathrm{Sn}}_{2}{\mathrm{S}}_{2}$ interfaces. If the sample is homogeneously magnetized, it demonstrates a well-developed anomalous Hall effect state. In this regime we find the Josephson current that takes place even for $5\ensuremath{-}\ensuremath{\mu}\mathrm{m}$-long junctions and show the unusual magnetic field and temperature dependencies. As a possible reason for the results obtained, we discuss the contribution to the proximity-induced spin-triplet Josephson current from the topologically protected Fermi-arc states on the surface of ${\mathrm{Co}}_{3}{\mathrm{Sn}}_{2}{\mathrm{S}}_{2}$.

Being encouraged by the interplay between topology, superconductivity and magnetism, we experimentally investigate charge transport through the interface between the Nb superconductor and the time-reversal symmetry breaking Weyl semimetal Co3Sn2S2. In addition to the proximity-induced superconducting gap, we observe prominent subgap zero-bias anomaly. The anomaly demonstrates an unusual robustness to external magnetic fields: its width is absolutely stable up to the critical field of Nb, while its amplitude exhibits a weak non-monotonous variation. As the promising scenario of emergence of the zero-bias anomaly in transport characteristics, we consider the proximity-induced zero-energy Andreev bound states interfaced with the half-metallic Co3Sn2S2 and influenced by the strong spin-orbit coupling and large Zeeman splitting.

We experimentally compare two types of interface structures with magnetic and non-magnetic Weyl semimetals. They are the junctions between a gold normal layer and magnetic Weyl semimetal Ti$_2$MnAl, and a ferromagnetic nickel layer and non-magnetic Weyl semimetal WTe$_2$, respectively. Due to the ferromagnetic side of the junction, we investigate spin-polarized transport through the Weyl semimetal surface. For both structures, we demonstrate similar current-voltage characteristics, with hysteresis at low currents and sharp peaks in differential resistance at high ones. Despite this behavior resembles the known current-induced magnetization dynamics in ferromagnetic structures, evolution of the resistance peaks with magnetic field is unusual. We connect the observed effects with current-induced spin dynamics in Weyl topological surface states., Comment: final version

We experimentally investigate transport properties of a hybrid structure, which consists of a thin single crystal SnSe flake on a top of 5~$\mu$m spaced Au leads. The structure initially is in highly-conductive state, while it can be switched to low-conductive one at high currents due to the Joule heating of the sample, which should be identified as phase transition to the symmetric $\beta$-$Cmcm$ phase in SnSe. For highly-conductive state, there is significant hysteresis in $dI/dV(V)$ curves at low biases, so the sample conductance depends on the sign of the applied bias change. This hysteretic behavior reflects slow relaxation due to additional polarization current in the ferroelectric SnSe phase, which we confirm by direct measurement of time-dependent relaxation curves. In contrast, we observe no noticeable relaxation or low-bias hysteresis for the quenched low-conductive phase. Thus, ferroelectric behavior can be switched on or off in transport through hybrid SnSe structure by controllable phase transition to the symmetric $\beta$-$Cmcm$ phase. This result can also be important for nonvolatile memory development, e.g. phase change memory for neuromorphic computations or other applications in artificial intelligence and modern electronics.

Investigations of topological insulators, which are two- and three-dimensional systems with a gap in the bulk spectrum and topologically protected gapless edge states, are of considerable fundamental interest at present. The experiments confirming the presence of the edge states in two-dimensional systems with inverted bands and problems of determining the nature of such states in these experiments are reviewed. Special attention is focused on spin-sensitive experiments since the topological edge states have a nontrivial spin structure.

We experimentally investigate spin-polarized electron transport between a permalloy ferromagnet and the edge of a two-dimensional electron system with band inversion, realized in a narrow, 8 nm wide, HgTe quantum well. In zero magnetic field, we observe strong asymmetry of the edge potential distribution with respect to the ferromagnetic ground lead. This result indicates that the helical edge channel, specific for the structures with band inversion even at the conductive bulk, is strongly coupled to the ferromagnetic side contact, possibly due to the effects of proximity magnetization. This allows selective and spin-sensitive contacting of helical edge states.

We experimentally investigate a non-linear Hall effect for three-dimensional WTe$_2$ and Cd$_3$As$_2$ single crystals, representing Weyl and Dirac semimetals, respectively. We observe finite second-harmonic Hall voltage, which depends quadratically on the longitudinal current in zero magnetic field. Despite this observation well corresponds to the theoretical predictions, only magnetic field dependence allows to distinguish the non-linear Hall effect from a thermoelectric response. We demonstrate that second-harmonic Hall voltage shows odd-type dependence on the direction of the magnetic field, which is a strong argument in favor of current-magnetization effects. In contrast, one order of magnitude higher thermopower signal is independent of the magnetic field direction., Comment: minor text correction

We experimentally investigate electron transport in kagome-lattice ferromagnet Co$_3$Sn$_2$S$_2$, which is regarded as a time-reversal symmetry broken Weyl semimetal candidate. We demonstrate $dV/dI(I)$ curves with pronounced asymmetric $dV/dI$ spikes, similar to those attributed to current-induced spin-wave excitations in ferromagnetic multilayers. In contrast to multilayers, we observe several $dV/dI$ spikes' sequences at low, $\approx$10$^4$ A/cm$^2$, current densities for a thick single-crystal Co$_3$Sn$_2$S$_2$ flake in the regime of fully spin-polarized bulk. The spikes at low current densities can be attributed to novel magnon branches in magnetic Weyl semimetals, which are predicted due to the coupling between two magnetic moments mediated by Weyl fermions. Presence of spin-transfer effects at low current densities in Co$_3$Sn$_2$S$_2$ makes the material attractive for applications in spintronics., Comment: final version

We experimentally investigate spin-polarized electron transport between two ferromagnetic contacts, placed at the edge of a two-dimensional electron system with band inversion. The system is realized in a narrow (8 nm) HgTe quantum well, the ferromagnetic side contacts are formed from a premagnetized permalloy film. In zero magnetic field, we find a significant edge current contribution to the transport between two ferromagnetic contacts. We experimentally demonstrate that this transport is sensitive to the mutual orientation of the magnetization directions of two 200 µm-spaced ferromagnetic leads. This is a direct experimental evidence on the spin-coherent edge transport over the macroscopic distances. Thus, the spin is extremely robust at the edge of a two-dimensional electron system with band inversion, confirming the helical spin-resolved nature of edge currents.

We experimentally study electron transport between two superconducting indium leads, coupled to the WTe2 crystal surface. WTe2 is characterized by presence of Fermi arc surface states, as a predicted type-II Weyl semimetal candidate. We demonstrate Josephson current in unprecedentedly long 5 µm In–WTe2–In junctions, which is confirmed by I–V curves evolution with temperature and magnetic field. The Josephson current is mostly carried by the topological surface states, which we demonstrate in a double-slit superconducting quantum interference device geometry, realized by coupling the opposite WTe2 crystal surfaces.

We experimentally investigate spin-polarized transport between a ferromagnetic Ni electrode and a surface of Weyl semimetal, realized in a thick WTe$_2$ single crystal. For highly-transparent Ni-WTe$_2$ planar junctions, we observe non-Ohmic $dV/dI(I)$ behavior with an overall increase of differential resistance $dV/dI$ with current bias, which is accomplished by current-induced switchings. This behavior is inconsistent with trivial interface scattering, but it is well known for spin-polarized transport with magnon emission. Thus, we interpret the experimental results in terms of spin wave excitation in spin textures in the WTe$_2$ topological surface states, which is supported by the obtained magnetic field and temperature $dV/dI(I)$ dependencies.

We experimentally investigate charge transport through the interface between a niobium superconductor and a three-dimensional WTe$_2$ Weyl semimetal. In addition to classical Andreev reflection, we observe sharp non-periodic subgap resistance resonances. From an analysis of their positions, magnetic field and temperature dependencies, we can interpret them as an analog of Tomasch oscillations for transport along the topological surface state across the region of proximity-induced superconductivity at the Nb-WTe$_2$ interface. Observation of distinct geometrical resonances implies a specific transmission direction for carriers, which is a hallmark of the Fermi arc surface states., Comment: 5 pages, some misprints has been corrected

We experimentally investigate electron transport through the interface between a superconductor and the edge of a two-dimensional electron system with band inversion. The interface is realized as a tunnel NbN side contact to a narrow 8~nm HgTe quantum well. It demonstrates a typical Andreev behavior with finite conductance within the superconducting gap. Surprisingly, the conductance is modulated by a number of equally-spaced oscillations. The oscillations are present only within the superconducting gap and at lowest, below 1~K, temperatures. The oscillations disappear completely in magnetic fields, normal to the two-dimensional electron system plane. In contrast, the oscillations' period is only weakly affected by the highest, up to 14~T, in-plane oriented magnetic fields. We interpret this behavior as the interference oscillations in a helical one-dimensional edge channel due to a proximity with a superconductor., Comment: minor corrections - as published

We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of InAs/GaSb spectrum, we study samples with 10 nm, 12 nm, and 14 nm thick InAs quantum wells. For the trivial case of a direct band insulator in 10~nm samples, differential resistance demonstrates standard Andreev reflection. For InAs/GaSb structures with band inversion (12~nm and 14 nm samples), we observe distinct low-energy structures, which we regard as direct evidence for the proximity-induced superconductivity within the current-carrying edge state. For 14~nm InAs well samples, we additionally observe mesoscopic-like resistance fluctuations, which are subjected to threshold suppression in low magnetic fields., Comment: final version

We experimentally study electron transport between two superconducting indium leads, coupled to a single WTe 2 crystal, which is a three-dimensional Weyl semimetal. We demonstrate Josephson current in 5 μ m long In-WTe 2 -In junctions, as confirmed by the observation of integer (1, 2, 3) and fractional (1/3, 1/2, 2/3) Shapiro steps under microwave irradiation. The demonstration of the fractional a.c. Josephson effect indicates the multivalued character of the current-phase relationship, which we connect with the Weyl topological surface states contribution to the Josephson current. In contrast to topological insulators and Dirac semimetals, we do not observe periodicity in the a.c. Josephson effect for WTe 2 at different frequencies and power, which might reflect the chiral character of the Fermi arc surface states in a Weyl semimetal.

This review presents experimental results on the inter-edge-state transport in the quantum Hall effect, mostly obtained in the regime of high imbalance. The application of a special geometry makes it possible to perform I-V spectroscopy between individual edge channels in both the integer and the fractional regime. This makes it possible to study in detail a number of physical effects such as the creation of topological defects in the integer quantum Hall effect and neutral collective modes excitation in fractional regime. The while many of the experimental findings are well explained within established theories of the quantum Hall effects, a number of observations give new insight into the local structure at the sample edge, which can serve as a starting point for further theoretical studies., 13 pages, 13 figures

We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transport regimes can be achieved by variation of the mesa step. We observe anomalous behavior of Andreev reflection within a finite low-bias interval, which is invariant for both transport regimes. We connect this behavior with the transition from retro- (at low biases) to specular (at high ones) Andreev reflection channels in an InAs/GaSb double quantum well with band inversion., Comment: As accepted to JETP Letters, vol. 104, issue 1

We use a quasi-Corbino sample geometry with independent contacts to different edge states in the quantum Hall effect regime to investigate a charge redistribution between cyclotron-split edge states at high imbalance. We also modify Buttiker formalism by introducing local transport characteristics in it and use this modified Buttiker picture to describe the experimental results. We find that charge transfer between cyclotron-split edge states at high imbalance can be described by a single parameter, which is a transferred between edge states portion of the available for transfer part of the electrochemical potential imbalance. This parameter is found to be independent of the particular sample characteristics, describing fundamental properties of the inter-edge-state scattering. From the experiment we obtain it in the dependence on the voltage imbalance between edge states and propose a qualitative explanation to the experimental findings., 5 pages, 4 figures, to appear in JETP Letters

Combining a quasi-Corbino geometry with the cross-gate technique, we developed a sample geometry that allows us to separately contact edge states in the integer and fractional quantum Hall regime. The energy barriers between edge states at integer filling factors give rise to pronounced steps in the I-V characteristics that directly reflect the gap structure of the reconstructed edge. The traces can readily be interpreted in terms of the Landauer-Buttiker formalism and the compressible/incompressible liquid picture. At a temperature of 30 mK and for the fractional filling factor combinations I : 2/3 and 1 : 1/3, the slopes of the obtained I-V traces at currents up to 50 nA are all in very good agreement with the predictions of the Landauer-Buttiker formalism, assuming edge states of fractional charge 1/3. From the nonlinearity of the I-V characteristics we estimate the energy barrier between fractional edge states of charge 1/3 to be of the order of 40 μeV.

We experimentally investigate Andreev transport through a single junction between an s-wave indium superconductor and a thick film of a three-dimensional $Bi_2Te_3$ topological insulator. We study $Bi_2Te_3$ samples with different bulk and surface characteristics, where the presence of a topological surface state is confirmed by direct ARPES measurements. All the junctions demonstrate Andreev transport within the superconducting gap. For junctions with transparent $In-Bi_2Te_3$ interfaces we find a number of nearly periodic conductance oscillations, which are accompanied by zero-bias conductance anomaly. Both effects disappear above the superconducting transition or for resistive junctions. We propose a consistent interpretation of both effects as originating from proximity-induced superconducting correlations within the $Bi_2Te_3$ topological surface state.

We experimentally investigate transport across a single incompressible strip at the sample edge in the fractional quantum Hall regime under high-imbalance conditions. We show that the I – V dependence exhibits a power-law behavior, which is the characteristic feature of a Luttinger-type tunnel density of states. The obtained results give the strong evidence for the existence of the so-called neutral collective modes at the sample edge. We observe the influence of the collective modes on the equilibration process across a single incompressible strip in the fractional quantum Hall regime.

We employ a magnetocapacitance technique to study the spectrum of the soft two-subband (or double-layer) electron system in a parabolic quantum well with a narrow tunnel barrier in the centre. In this system unbalanced by gate depletion, at temperatures $T\agt 30$ mK we observe two sets of quantum oscillations: one originates from the upper electron subband in the closer-to-the-gate part of the well and the other indicates the existence of common gaps in the spectrum at integer fillings. For the lowest filling factors $\nu=1$ and $\nu=2$, both the common gap presence down to the point of one- to two-subband transition and their non-trivial magnetic field dependences point to magnetic-field-induced hybridization of electron subbands., Comment: Major changes, added one more figure, the latest version to be published in JETP Lett

We experimentally realize quantum Hall Mach-Zehnder interferometer which operates far beyond the equilibrium. The operation of the interferometer is based on allowed intra-edge elastic transitions within the same Landau sublevel in the regime of high imbalances between the co-propagating edge states. Since the every edge state is definitely connected with the certain Landau sublevel, the formation of the interference loop can be understood as a splitting and a further reconnection of a single edge state. We observe an Aharonov-Bohm type interference pattern even for low-size interferometers. This novel interference scheme demonstrates high visibility even at millivolt imbalances and survives in a wide temperature range., Comment: As accepted by PRB

We use the edge of the quantum Hall sample to study the possibility for counter-propagating neutral collective excitations. A novel sample design allows us to independently investigate charge and energy transport along the edge. We experimentally observe an upstream energy transfer with respect to the electron drift for the filling factors 1 and 1/3. Our analysis indicates that a neutral collective mode at the interaction-reconstructed edge is a proper candidate for the experimentally observed effect., Final version, as appear in PRL

We experimentally study a transport across the integer incompressible strip with local filling factor νc=1 at the sample edge at high imbalances across this strip. The bulk is in the quantum Hall state at the integer (ν=2,3) or high fractional (ν=5/3,4/3) filling factors. Unlike the integer case, for the fractional bulk filling factors, we find a lack of the full equilibration across the edge even in the situation where no potential barrier survives in the integer incompressible strip with νc=1. We interpret this result as the manifestation of complicated edge excitation structure at high fractional filling factors.

We experimentally study equilibration between edge states, co-propagating at the edge of the fractional quantum Hall liquid, at high initial imbalances. We find an anomalous increase of the conductance between the fractional edge states at the filling factor $\nu=2/5$ in comparison with the expected one for the model of independent edge states. We conclude that the model of independent fractional edge states is not suitable to describe the experimental situation at $\nu=2/5$., Comment: 4 pages

We experimentally investigate transport across the incompressible stripe at the sample edge in the fractional quantum Hall effect regime at bulk filling factors $\nu=2/3$ and $\nu=2/5$. We obtain the dependence of the equilibration length, that is a phenomenological characteristics of the transport, on the voltage imbalance and the temperature, at high voltage imbalances. These dependencies are found to be of the power-law form, which is a strong evidence for the Luttigger liquid density of states., Comment: 4 pages, to appear in EPL

We apply a novel inductive coupling technique to study edge magnetoplasmons (EMP) in two-dimensional electron gases in the time domain. This technique is mostly appropriated for measurements on gated samples in the low-magnetic-field limit. We obtain time delay, amplitude, and broadening of the EMP as a function of the magnetic field.

We experimentally study electron transport between edge states in the fractional quantum Hall effect regime. We find an anomalous increase of the transport across the 2/3 incompressible fractional stripe in comparison with theoretical predictions for the smooth edge potential profile. We interpret our results as a first experimental demonstration of the intrinsic structure of the incompressible stripes arising at the sample edge in the fractional quantum Hall effect regime., Comment: 5 pages, 5 figures included. Submitted to JETP Letters

We study the plateaux of the integer quantum Hall resistance in a bilayer electron system in tilted magnetic fields. In a narrow range of tilt angles and at certain magnetic fields, the plateau level deviates appreciably from the quantized value with no dissipative transport emerging. A qualitative account of the effect is given in terms of decoupling of the edge states corresponding to different electron layers/Landau levels., Comment: 3 pages, 3 figures included

We employ magnetocapacitance measurements to study the spectrum of a double layer system with gate-voltage-tuned electron density distributions in tilted magnetic fields. For the dissipative state in normal magnetic fields at filling factor $\nu=3$ and 4, a parallel magnetic field component is found to give rise to opening a gap at the Fermi level. We account for the effect in terms of parallel-field-caused orthogonality breaking of the Landau wave functions with different quantum numbers for two subbands., Comment: 4 pages, 4 figures included, to appear in JETP Letters

We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels at the depletion-induced edges of a gated two-dimensional electron system. For a sufficiently high barrier a typical current-voltage characteristic is found to be strongly asymmetric and include, apart from a positive tunneling branch, the negative branch that corresponds to the current overflowing the barrier. We establish the barrier height depends linearly on both gate voltage and magnetic field and we describe the data in terms of electron tunneling between the outermost edge channels., Comment: 4 pages, 4 figures. Accepted to JETP Lett

The zero bias anomaly (ZBA) of the tunnel conductivity are investigated in the Al/δ – GaAs tunnel structure with 2D electron concentration in δ-layer to be equal to 3.6*1012 cm−2. We find that the dip (ZBA) in the tunnel density of states near the Fermi level EF reveals logarithmic dependence on the energy e in the range kT < < /r. Here is the energy relative to Ef and r is the elastic relaxation time of 2D electrons. The depth of the ZBA is proportional to ln(T/T0) in the range T = 0.1 – 20 K. These results are in agreement with Aronov-Altshuler theory in which the correction to the 2D density of states is due to the effects of the electron-electron interaction in diffusion channel. The unusual behavior of the tunnel magnetoconductivity is observed.

Strong electron–electron interactions in dilute two-dimensional electron systems in silicon lead to Pauli spin susceptibility growing critically at low electron densities. This effect originates from renormalization of the effective mass rather than the g-factor. The relative mass enhancement is system and disorder independent, which suggests that it is determined by electron–electron interactions only.

Using a quasi-Corbino geometry to directly study electron transport between spin-split edge states under high imbalance conditions, we find a pronounced hysteresis in the I−V curves originating from dynamic nuclear polarization near the sample edge. Already in the simplest case of filling factor ν=2 we observe a complicated relaxation, depending on the sign of the electrochemical potential difference. The characteristic relaxation times are about 25 s and 200 s, which points to the presence of two different relaxation mechanisms. The two time constants are ascribed to the formation of a local nuclear polarization due to flip-flop processes and the diffusion of nuclear spins.