1. Low recombination n+ regions created by n+ c-Si epitaxial layers and laser processing of phosphorus-doped SiCx films
- Author
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Martín García, Isidro|||0000-0001-8833-9057, Colina Brito, Mónica Alejandra|||0000-0003-3212-1926, Orpella García, Alberto|||0000-0003-2726-5861, Voz Sánchez, Cristóbal|||0000-0002-0320-9606, De Vecchi, S., Desrues, T., Abolmasov, S., Roca i Cabarrocas, P., Alcubilla González, Ramón|||0000-0003-4827-4513, Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, and Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
- Subjects
Energies::Energia solar fotovoltaica [Àrees temàtiques de la UPC] ,Wafer-Based Silicon Solar Cells and Materials Technology ,Photovoltaic power generation ,Energia solar fotovoltaica ,Silicon Solar Cell Improvements - Abstract
27th European Photovoltaic Solar Energy Conference and Exhibition; 1519-1523, Solar cells with locally contacted rear surface exhibit a trade off between surface passivation and ohmic losses. In order to reduce the penalty in Fill Factor (FF) when long distances between contacts are used, we explore the use of a low temperature epitaxially grown n+ c-Si layer at the rear surface of n-type c-Si solar cells. Additionally, the passivation and contact formation are also developed at low temperature using phosphorus-doped silicon carbide films (SiCx) and laser processing. Firstly, we obtain an effective surface recombination velocity (Seff) on 3.5 Ω cm n-type c-Si surface as low as 3 cm/s for SiCx films deposited at 225 ºC. Next, we determine laser parameters that yield good quality n++ regions ready to be contacted. These regions exhibit a surface recombination velocity of 1500 cm/s that results in a final Seff value well below 100 cm/s even for short pitches. Regarding the epitaxial silicon layer (epi-Si), an electrically active donor density of 1.2x1020 cm-3 is determined. The combination of the epi-Si layer with the SiCx film leads to Seff of ~300 cm/s. This relatively high Seff value can be attributed to the high donor density that increases bulk recombination within the epi-Si layer. Finally, we compare c-Si heterojunction solar cells with and without the epi-Si layer. The introduction of an epi-Si layer improves FF from 72.5 % to 77.3 % with the same distance between contacts. However, open-circuit voltage significantly decreases due to a higher rear surface recombination velocity.