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3. Strategic R&D Programme on Technologies for Future Experiments - Annual Report 2020

Author

Aglieri, Gianluca, Aleksa, Martin, Feito, Diego Alvarez, Angeletti, Massimo, Antoszczuk, Pablo, Ballabriga, Rafael, Balutto, Mattia, Higueras, Maria Barba, Barney, David, Baron, Sophie, Pinto, Mateus Barreto, Van Beelen, Jacob Bastian, Baszczyk, Mateusz Karol, Beguin, Marina, Biereigel, Stefan, Blomer, Jakob, De Souza Mendes, Eduardo Brandao, Brondolin, Erica, Brunbauer, Florian, Buschmann, Eric, Buytaert, Jan, Cala', Roberto, Campbell, Michael, Catinaccio, Andrea, Cecconi, Leonardo, Ceresa, Davide, Lemos, Edgar Cid, Coco, Victor, Collins, Paula, Corbetta, Mara, Cure, Benoit, Dachs, Florian, D'Ambrosio, Carmelo, Dannheim, Dominik, De Melo, Joao, De Oliveira, Rui, Deng, Wenjing, Detraz, Stephane, Dias, Matheo, Dobrijevic, Dominik, Martin, Ana Dorda, Dort, Katharina, Dumps, Raphael, Faccio, Federico, Declara, Placido Fernandez, Fiorenza, Gabriele, Forty, Roger, Francois, Brieuc, Bulling, Anthony Frederick, Gargiulo, Corrado, Gessinger-Befurt, Paul, Gkougkousis, Vagelis, Gose, Melwin, Guida, Roberto, Hahnfeld, Jonas, Haimberger, Jakob, Halvorsen, Marius, Hong, Geun Hee, Hellenschmidt, Desiree, Ijzermans, Pieter, Janot, Patrick, Janssens, Djunes, Williams, Morag Jean, Joram, Christian, Kiehn, Moritz, Klekotko, Adam, Kloukinas, Kostas, Kluge, Alex, Krammer, Manfred, Kroeger, Jens, Lafuente, Antonio, Lalovic, Milana, Laudi, Elisa, Ledey, Gael, Linssen, Lucie, Lisowska, Marta, Gomez, Javier Lopez, Malinowski, Filip Maciej, Magatti, Demetrio, Mandelli, Beatrice, Martinazzoli, Loris, Vila, Pere Mato, Maulerova, Vendula, Mentink, Matthias, Gonzalez, Maria Molina, Moll, Michael, Muller, Hans, Munker, Magdalena, Musa, Luciano, Neroni, Michela, Olantera, Lauri, Oliveri, Eraldo, Padulano, Vincenzo, Pejasinovic, Risto, Pernegger, Heinz, Petagna, Paolo, Piro, Francesco, Pizzirusso, Olivier, Prousalidi, Thenia, Quast, Thorben, Rembser, Christoph, Riedler, Petra, Riegler, Werner, Rigoletti, Gianluca, Rivera, Esteban Curras, Moreira, Paulo Rodrigues Simoes, Ropelewski, Leszek, Salamani, Dalila, Salomoni, Matteo, Scarcella, Carmelo, Scharenberg, Lucian, Schindler, Heinrich, Schmidt, Burkhard, Schneider, Thomas, Schopper, Andreas, Secouet, Pascal, Singh, Shuvay, Snoeys, Walter, Soos, Csaba, Stewart, Graeme, Teixeira, Antonio, Teofili, Lorenzo, Termo, Gennaro, Troska, Jan, Utrobicic, Antonija, Van Stenis, Miranda, Vanat, Tomas, Vasey, Francois, Veenhof, Rob, Leitao, Pedro Vicente, Vicente, Mateus, Volkl, Valentin, Wanotayaroj, Chaowaroj, Wiehe, Moritz, Wunsch, Stefan, Auffray-Hillemanns, Etiennette, Borghello, Giulio, Michelis, Stefano, Pantaleo, Felice, Pizzichemi, Marco, Ripamonti, Giacomo, Roloff, Philipp, Rovere, Marco, Sailer, André, and Salzburger, Andreas

Abstract

This report summarises the activities and achievements of the strategic R&D programme on technologies for future experiments in the year 2020.

Published
2020

4. Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose

Author

Nikolaou Aristeidis, Chevas Loukas, Papadopoulou Alexia, Makris Nikolaos, Bucher Matthias, Borghello Giulio, and Faccio Federico

Subjects
Radiation hardness, Large Hadron Collider, Materials science, business.industry, Integrated circuit, Radiation, Threshold voltage, law.invention, Enclosed layout, Computer Science::Hardware Architecture, law, MOSFETs, Absorbed dose, Logic gate, Optoelectronics, High-Luminosity Large Hadron Collider, Electronics, High energy physics, Total ionizing dose, business, Sensitivity (electronics)
Abstract

Summarization: Frond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. The present paper presents a detailed analysis of the functionality of EG MOSFETs operating under high TID, taking into accountspecific layout characteristics. Παρουσιάστηκε στο: 26th International Conference "Mixed Design of Integrated Circuits and Systems"

Published
2019

5. Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS

Author

Chevas Loukas, Nikolaou Aristeidis, Bucher Matthias, Makris Nikolaos, Papadopoulou Alexia, Zografos Apostolos, Borghello Giulio, Koch Henri D., and Faccio Federico

Subjects
Ionizing radiation, 010302 applied physics, Materials science, 010308 nuclear & particles physics, business.industry, Transistor, High Luminosity Large Hadron Collider, Total ionizing dose (TID), Radiation, Analog parameter, 01 natural sciences, law.invention, MOSFET, CMOS, law, Absorbed dose, 0103 physical sciences, Optoelectronics, Irradiation, business, High Luminosity-Large Hadron Collider
Abstract

Summarization: Ten-fold radiation levels are expected in the upgrade of the High-Luminosity Large Hadron Collider (HL-LHC) at CERN. Bulk silicon CMOS at 65 nm offers appreciable advantages among cost, performance, and resilience to high Total Ionizing Dose (TID). In the present paper, geometrical scaling of key analog design parameters of MOS transistors irradiated at high TID is investigated. Experiments are carried out for TID of 100, 200 and up to 500 Mrad(SiO2) and at -30°C, 0°C, and 25°C. We find that parameters are least degraded at -30°C. However, short-channel NMOSTs show a significant degradation of slope factor, which is more severe at 0°C than at 25°C. In contrast, the slope factor in short-channel PMOSTs shows lowest sensitivity to high TID. Παρουσιάστηκε στο: 25th International Conference ""Mixed Design of Integrated Circuits and Systems""

Published
2018
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6. Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout

Author

Bucher Matthias, Nikolaou Aristeidis, Papadopoulou Alexia, Makris Nikolaos, Chevas Loukas, Borghello Giulio, Koch Henri D., and Faccio Federico

Subjects
Materials science, Silicon, Transconductance, chemistry.chemical_element, Parameter extraction, 01 natural sciences, law.invention, MOSFET, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, High doses, Radiation hardness, 010302 applied physics, 010308 nuclear & particles physics, business.industry, Transistor, Modeling, Threshold voltage, Enclosed layout, CMOS, chemistry, Saturation transfer, Absorbed dose, Analog parameters, Optoelectronics, Total ionizing dose, business
Abstract

Summarization: High doses of ionizing irradiation cause significant shifts in design parameters of standard bulk silicon CMOS. Analog performance of a commercial 65 nm CMOS technology is examined for standard and enclosed gate layouts, with Total Ionizing Dose (TID) up to 500 Mrad(SiO2). The paper provides insight into geometrical and bias dependence of key design parameters such as threshold voltage, DIBL, transconductance efficiency, slope factor, and intrinsic gain. A modeling approach for an efficient representation of saturation transfer characteristics under TID from weak through moderate and strong inversion and over channel length is discussed. Παρουσιάστηκε στο: IEEE International Conference on Microelectronic Test Structures

Published
2018
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