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1. Towards scalable quantum computing based on silicon spin

Author

Crippa, A., Ezzouch, R., Aprá, A., Amisse, A., Laviéville, R., Hutin, L., Bertrand, B., Vinet, M., Urdampilleta, M., Meunier, T., Sanquer, M., Jehl, X., Maurand, R., de Franceschi, S., Thonnart, Y., Pillonnet, G., Billiot, G., Jacquinot, H., Casse, M., Barraud, S., Kim, Y.-J., Mazzocchi, V., Bohuslavskyi, H., Bourdet, L., Niquet, Y.-M., Venitucci, B., Jadot, B., Chanrion, E., Mortemousque, P.-A., Spence, C., PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
[PHYS]Physics [physics], Physics, Quantum decoherence, Quantum error correction, Quantum mechanics, Qubit, Physical system, Quantum Physics, Supercomputer, Quantum, ComputingMilieux_MISCELLANEOUS, Quantum computer, Spin-½
Abstract

Quantum computing (QC) is expected to extend the high performance computing roadmap [1]–[2] at the condition to be able to run a large number of errorless quantum operations, typically. over a billion. It is out of reach in actual physical systems because of the quantum decoherence. As a consequence, quantum error correction techniques, which utilize the idea of redundant encoding, have been introduced to cure for the errors [3]–[5]. In state-of-the-art codes, with error thresholds or fidelities around 10−2 in Si spin qubits, it is expected that logical qubits will be made out of a few thousands or more of physical qubits [6], bringing the number of required physical qubits to perform relevant quantum calculations to at least a million.

Published
2019
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2. Pauli spin blockade in CMOS double quantum dot devices

Author

Kotekar-Patil, D., Corna, A., Maurand, R., Crippa, A., Orlov, A., Barraud, S., Hutin, L., Vinet, M., Jehl, X., Silvano De Franceschi, Sanquer, M., Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), University of Notre Dame [Indiana] (UND), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and European Project: 1323160(2013)

Subjects
ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]
Abstract

International audience

Published
2017
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3. Pauli spin blockade in CMOS double quantum dot devices

Author

Kotekar-Patil, D., Corna, A., Maurand, R., Crippa, A., Orlov, A., Barraud, S., Jehl, X., De Franceschi, S., and Sanquer, M.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Abstract

Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on transport experiments in double gate nanowire transistors issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as two few-electron quantum dots in series. We observe signatures of Pauli spin blockade with a singlet-triplet splitting ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that transitions which conserve spin are shown to be magnetic-field independent up to B = 6 T., Comment: 5 pages , 4 figures

Published
2016
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4. Design and cryogenic operation of a hybrid quantum-CMOS circuit

Author

Clapera, P., Jehl, X., Corna, A., Ray, S. J., Sanquer, M., Valentian, A., Barraud, S., Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Département Composants Silicium (DCOS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), European Project: 318397,EC:FP7:ICT,FP7-ICT-2011-8,TOLOP(2012), European Project: 610637,EC:FP7:ICT,FP7-ICT-2013-10,SIAM(2013), and European Project: Qu-Ampere

Subjects
Mosfets, General Physics and Astronomy, FOS: Physical sciences, Transistors, 7. Clean energy, law.invention, Computer Science::Hardware Architecture, Computer Science::Emerging Technologies, law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Microelectronics, Electronics, Quantum, Physics, [PHYS]Physics [physics], Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Transistor, Electrical engineering, Coulomb blockade, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, CMOS, Proof of concept, Coulomb-Blockade, Radio frequency, Graphene, business, Single-Electron
Abstract

International audience; Silicon-on-insulator nanowire transistors of very small dimensions exhibit electrostatic or quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for larger dimensions, allowing us to design integrated circuits. Using the same process, we cointegrate a FET-based ring oscillator circuit operating at cryogenic temperature which generates a radio-frequency (rf) signal on the gate of a nanoscale device showing Coulomb oscillations. We observe rectification of the rf signal, in good agreement with modeling.

Published
2015
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5. A high-sensitivity gate-based charge sensor in silicon

Author

Gonzalez-Zalba, M. F., Ferguson, A. J., Barraud, S., and Betz, A. C.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences
Abstract

The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in enabling spin qubit experiments in all-electrical, semiconductor based quantum computing. As experiments grow more sophisticated, and head towards multiple qubit architectures that enable small scale computation, it becomes important to consider the charge read-out overhead. With this in mind, Reilly et al. demonstrated a gate readout scheme in a GaAs double quantum dot that removed the need for an external charge sensor. This readout, which achieved sensitivities of order me/$\sqrt(Hz)$, was enabled by using a resonant circuit to probe the complex radio-frequency polarisability of the double quantum dot. However, the ultimate performance of this technology and the noise sources that limit it remain to be determined. Here, we investigate a gate-based readout scheme using a radio-frequency resonant circuit strongly coupled to a double quantum at the corner states of a silicon nanowire transistor. We find a significantly improved charge sensitivity of 37 $\mu$e/$\sqrt(Hz)$. By solving the dynamical master equation of the fast-driven electronic transitions we quantify the noise spectral density and determine the ultimate charge and phase sensitivity of gate-based read-out. We find comparable performance to conventional charge sensors and fundamental limits of order ne/$\sqrt(Hz)$ and $\mu$rad/$\sqrt(Hz)$, with the gate-based sensor improving on standard detection for certain device parameters. Our results show that, especially in state-of-the-art silicon qubit architectures, charge detection by probing the complex polarisability has advantages in terms of reducing the readout overhead but also in terms of the absolute charge sensitivity., Comment: 9 pages, 5 figures

Published
2014
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6. A Pearson Effective Potential for Monte-Carlo simulation of quantum confinement effects in various MOSFET architectures

Author

Jaud, M. -A., Barraud, S., Dollfus, P., and Jaouen, H.

Subjects
Condensed Matter - Other Condensed Matter, Condensed Matter - Materials Science, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Other Condensed Matter (cond-mat.other)
Abstract

A Pearson Effective Potential model for including quantization effects in the simulation of nanoscale nMOSFETs has been developed. This model, based on a realistic description of the function representing the non zero-size of the electron wave packet, has been used in a Monte-Carlo simulator for bulk, single gate SOI and double-gate SOI devices. In the case of SOI capacitors, the electron density has been computed for a large range of effective field (between 0.1 MV/cm and 1 MV/cm) and for various silicon film thicknesses (between 5 nm and 20 nm). A good agreement with the Schroedinger-Poisson results is obtained both on the total inversion charge and on the electron density profiles. The ability of an Effective Potential approach to accurately reproduce electrostatic quantum confinement effects is clearly demonstrated., Comment: 13 pages, 11 figures, 3 tables

Published
2008
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7. Electrical Control of g -Factor in a Few-Hole Silicon Nanowire MOSFET

Author

Voisin, B., Maurand, R., Barraud, S., Vinet, M., Jehl, X., Sanquer, M., Renard, J., Silvano De Franceschi, Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), European Project: 280043,EC:FP7:ERC,ERC-2011-StG_20101014,HYBRIDNANO(2012), European Project: 32384,SiSPIN, and European Project: 610637,SIAM

Subjects
ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]
Abstract

International audience

10. Innovative through-Si 3D lithography for ultimate self-aligned planar Double-Gate and Gate-All-Around nanowire transistors

Author

Coquand R., Monfray S., Barraud S., Samson, M. P., Arvet C., Pradelles J., Bustos J., Martin L., Tosti L., Perreau P., Hartmann J.M., Lacord J., Cassé M., Clement L., Pofelski A., Lepinay K., gerard ghibaudo, Faynot O., Poiroux T., Boeuf F., Skotnicki T., Salvo B. De, CEA Le Ripault (CEA Le Ripault), Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut de biologie moléculaire des plantes (IBMP), Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), IBM-STMicroelectronics-CEA/LETI-MINATEC Development Alliance, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA), and Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA)

Subjects
three-dimension integrated circuits, lithography, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, CMOS integrated circuits
Abstract

Session 15: Nanowires (#15.1); International audience

11. Stormwater Source Control as a Strategy for Sustainable Development: State of the Practice and Perceived Trends

Author

Rivard, G., Raimbault, G., Barraud, S., Gabriele Freni, Ellis, B., Zaizen, M., Ashley, R., Quigley, M., Strecker, E., G RIVARD, G RAIMBAULT, S BARRAUD, FRENI G, B ELLIS, M ZAIZEN, RASHLEY, M QUIGLEY, and E STRECKER

Subjects
sustainable development, BMPs design criteria, BMPs effectiveness, integrated water management, tormwater source control
Abstract

The primary objective of the paper is to draw upon the experiences acquired in many parts of the world to provide an up-to-date summary of the state of the practice for source control techniques and approaches, in a sustainable development context. After a discussion of the prevailing context for urban drainage approaches, three main themes covering techniques and design criteria, institutional aspects and performance issues are discussed relative to source control implementation. The discussion is based on findings from the compilation and analysis of available literature, recently developed databases, the experience of the different members of the SOCOMA group and recent research on design methodologies that explicitly seek to better couple effective design and achievement of performance goals. The paper also discusses perceived trends in the selection, analysis, and implementation of source controls, highlighting the areas where knowledge is lacking and providing recommendations on needs for future research.

13. Experimental Investigation of Low and High Field Transport in Substrate- and Process-Induced Strained Nanoscaled MOSFETs

Author

Andrieu, F., Ernst, T., Lime, F., Rochette, F., Romanjek, K., Barraud, S., Cassé, M., Ravit, C., Boeuf, F., Jurczak, M., Webe, O., Brévard, L., Reimbold, G., gerard ghibaudo, Deleonibus, S., Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), and Domenget, Chahla

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

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