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2. Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy

Author

B. Alén, D. Fuster, G. Muñoz-Matutano, P. Alonso-González, J. Canet-Ferrer, J. Martínez-Pastor, I. Fernández-Martínez, M. Royo, J. I. Climente, Y. González, F. Briones, D. Hernández, S. I. Molina, L. González, Jisoon Ihm, and Hyeonsik Cheong

Subjects
Materials science, Condensed matter physics, media_common.quotation_subject, Nucleation, Physics::Optics, Charge (physics), Epitaxy, Molecular physics, Asymmetry, Quantum dot, Electric field, Area density, Diffusion (business), media_common
Abstract

Trabajo presentado a la 30th International Conference on the Physics of Semiconductors, celebrada en Seul (Korea) del 25 al 30 de Julio de 2010., The emission properties of lateral and vertical QD pairs grown on GaAs nanoholes are investigated. Vertical QD pairs with different size asymmetry have been fabricated controlling the bottom QD size independently of the areal density. The emission of individual pairs is dominated by spectral diffusion effects and charge instabilities induced by the local charge environment. Lateral QD pairs have been fabricated on GaAs nanoholes and studied as a function of an electric field applied in the growth plane.

Published
2010

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