Search

The halide perovskite CsPbBr$_3$ belongs to the Cs-Pb-Br material system, which features two additional thermodynamically stable ternary phases, Cs$_4$PbBr$_6$ and CsPb$_2$Br$_5$. The coexistence of these phases and their reportedly similar photoluminescence have resulted in a debate on the nature of the emission in these systems. Here, we combine optical and microscopic characterization with an effective mass, correlated electron-hole model of excitons in confined systems, to investigate the emission properties of the ternary phases in the Cs-Pb-Br system. We find that all Cs-Pb-Br phases exhibit green emission and the non-perovskite phases exhibit photoluminescence quantum yields orders of magnitude larger than CsPbBr$_3$. In particular, we measure blue- and red-shifted emission for the Cs- and Pb-rich phases, respectively, stemming from embedded CsPbBr$_3$ nanocrystals. Our model reveals that the difference in emission shift is caused by the combined effects of nanocrystal size and different band mismatch. Furthermore, we demonstrate the importance of including the dielectric mismatch in the calculation of the emission energy for Cs-Pb-Br composites. Our results explain the reportedly limited blue shift in CsPbBr$_3$@Cs$_4$PbBr$_6$ composites and rationalize some of its differences with CsPb$_2$Br$_5$.

Interface recombination at the absorber buffer interface impedes the efficiency of a solar cell with an otherwise excellent absorber. The internal voltage or the quasi-Fermi level splitting (qFLs) measures the quality of the absorber. Interface recombination reduces the open circuit voltage (VOC) with respect to the qFLs. The present work explores a facile sulfur-based post-deposition treatment (S-PDT) to passivate the interface of CuInS2 thin films grown under Cu-rich conditions, which show excellent qFLs values, but much lower VOCs. The CuInS2 absorbers are treated in three different S-containing solutions at 80 oC. Absolute calibrated photoluminescence and current-voltage measurements demonstrate a reduction of the deficit between qFLs and VOC in the best S-PDT device by almost one third compared to the untreated device. Analysis of temperature dependence of the open-circuit voltage shows increased activation energy for the dominant recombination path, indicating less interface recombination. In addition, capacitance transient measurements reveal the presence of slow metastable defects in the untreated solar cell. The slow response is considerably reduced by the S-PDT, suggesting passivation of these slow metastable defects. The results demonstrate the effectiveness of solution based S-treatment in passivating defects, presenting a promising strategy to explore and reduce defect states near the interface of chalcogenide semiconductors., Comment: 43 pages, 14 figures, 5 tables, under review

This work presents results from high-resolution scanning transmission electron microscopy and electron energy-loss spectroscopy on twin boundaries (TBs) and nontwin grain boundaries (GBs) in Cu (In, Ga) Se2 thin films. It is shown that the atomic reconstruction is different for different symmetries of the grain boundaries. We are able to confirm the model proposed by Persson and Zunger [Phys. Rev. Lett. 91, 266401 (2003)] for Se-Se-terminated Σ3 {112} TBs, showing Cu depletion and In enrichment in the two atomic planes closest to the TB. On the contrary, Cu depletion without In enrichment is detected for a cation-Se-terminated TB. At nontwin GBs, always a strong anticorrelation of Cu and In signals is detected suggesting that the formation of InCu or CuIn antisites within a very confined region of smaller than 1 nm is an essential element in the reconstruction of these GBs, Funding from the German ministry for environment (BMU) under Contract No. 0327559H (German-Israeli project ProGraB) as well as by the ESTEEM project is gratefully acknowledged

Mc 2009. Microscopy Conference, Graz, Austria. 30 August - 4 September 2009. First Joint Meeting Of Dreiländertagung And Multinational Congress On Microscopy.