1. Efficiency gain in plated bifacial n-type PERT cells by means of a selective emitter approach using selective epitaxy
- Author
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Jozef Szlufcik, Filip Duerinckx, Richard Russell, Izabela Kuzma Filipek, Jef Poortmans, Maria Recaman Payo, Sukhvinder Singh, Yuandong Li, Recamán Payo, María, Li, Yuandong, Russell, Richard, Singh, Sukhvinder, Kuzma Filipek, Izabela, DUERINCKX, Filip, Szlufcik, Jozef, and POORTMANS, Jef
- Subjects
Technology ,Materials science ,Energy & Fuels ,POLYSILICON ,Materials Science ,Materials Science, Multidisciplinary ,02 engineering and technology ,Dielectric ,Blanket ,010402 general chemistry ,Epitaxy ,01 natural sciences ,Physics, Applied ,Passivating contact ,Plating ,Plating Bifacial solar cell ,OPTIMIZATION ,Common emitter ,Science & Technology ,Laser ablation ,p-Type contact ,Renewable Energy, Sustainability and the Environment ,business.industry ,Physics ,Doping ,PASSIVATING CONTACTS ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Bifacial solar cell ,Homogeneous ,METAL ,Physical Sciences ,SI SOLAR-CELLS ,Selective epitaxy ,Optoelectronics ,RESISTIVITY ,0210 nano-technology ,business ,Layer (electronics) ,RESISTANCE - Abstract
This work evaluates the potential of selective epitaxy to mitigate the recombination losses at the p-type contact regions of plated bifacial n-type PERT cells. Following the growth of a 500 nm, 2.5 10(19) cm(-3) boron doped epitaxial layer at the emitter contact regions defined by laser ablation of the passivating dielectrics, both an increase in V-oc (+6 mV) and FF (+ 1% absolute) are measured in the final cells compared to the reference with a homogeneous diffused emitter. These results come with an average efficiency gain of 0.3 and 0.5% absolute for front and rear side illumination, respectively. If the diffused, blanket emitter in the passivated regions is replaced by a thicker, lowly doped epitaxial profile (3 mu m, 5 10(18) cm(-3)) to further reduce recombination, an additional rise in implied V-oc after metallization of 10 mV is estimated. This increase would be the result of a reduction in J(0,pass, emitter) (down to 6 fA/cm(2)) and J(0,plated, emitter) (down to 1967 fA/cm(2)).
- Published
- 2020
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