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Start Over Topic electronic, optical and magnetic materials Language undetermined
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1. Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements

Author

Ali Soltani, Meriem Bouchilaoun, Samuel Graham, Georges Pavlidis, Hassan Maher, Christophe Rodriguez, Adrien Cutivet, Bilal Hassan, Francois Boone, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), OMMIC, Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Optoélectronique - IEMN (OPTO - IEMN), and This work was supported in part by the Fonds quèbècois de la recherche sur la nature et les technologies (FRQNT) and in part by the Natural Sciences and Engineering Research Council of Canada (NSERC). The review of this paper was arranged by Editor R. Venkatasubramanian

Subjects
Materials science, Thermal resistance, Gallium nitride, High-electron-mobility transistor, 01 natural sciences, Temperature measurement, law.invention, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, gate resistance thermometry (GRT), law, 0103 physical sciences, Thermal, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, high-electron-mobilitytransistors (HEMTs), business.industry, Transistor, modeling, Electronic, Optical and Magnetic Materials, chemistry, Gallium nitride (GaN), Logic gate, Optoelectronics, thermoreflectance, Transient (oscillation), business, transient temperature measurement
Abstract

International audience; Abstract:This paper details an extraction procedure to fully model the transient self-heating of transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry (f-GRT) is used to extract the thermal impedance of HEMTs with various gate widths. A fully scalable analytical model is developed from the experimental results. In the second stage, transient thermoreflectance imaging (TTI) is used to bring deeper insights into the HEMTs' temperature distribution by individually extracting the transient self-heating of each finger. TTI results are further used to successfully validate the f-GRT results and the modeling of the thermal impedance. Overall, f-GRT is demonstrated to be a fast and robust method for characterizing the transient thermal characteristics of a GaN HEMT. For the first time to the authors' knowledge, a scalable model of the thermal impedance is extracted fully from experimental results.

Published
2019

2. Electronic structure of atomically coherent square semiconductor superlattices with dimensionality below two

Author

Daniel Vanmaekelbergh, Christophe Delerue, Wiel H. Evers, Efterpi Kalesaki, Guy Allan, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), University of Luxembourg [Luxembourg], Delft University of Technology (TU Delft), Debye Institute for Nanomaterials Science, Utrecht University [Utrecht], This work has been supported by funding of the French National Research Agency [ANR, (ANR-09-BLAN-0421-01)]. E.K., C.D., and G.A. performed the calculations. W.H.E performed sample preparation and structural analysis. C.D. was a visiting professor at the Debye Institute for Nanomaterials Science at the time of this research. C.D. and D.V. supervised the project. All authors were involved in writing of the paper., and ANR-09-BLAN-0421,ETSFG(2009)

Subjects
Materials science, Spintronics, Condensed matter physics, business.industry, Superlattice, Physics [G04] [Physical, chemical, mathematical & earth Sciences], 02 engineering and technology, Electronic structure, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 7. Clean energy, 01 natural sciences, Electronic, Optical and Magnetic Materials, Atomic coherence, [SPI]Engineering Sciences [physics], Semiconductor, Physique [G04] [Physique, chimie, mathématiques & sciences de la terre], 0103 physical sciences, Nano, 010306 general physics, 0210 nano-technology, business, Quantum well, Curse of dimensionality
Abstract

The electronic structure of recently synthesized square superlattices with atomic coherence composed of PbSe, CdSe, or CdTe nanocrystals (NCs) attached along {100} facets is investigated using tight-binding calculations. In experimental realizations of these systems [W. H. Evers et al., Nano Lett. 13, 2317 (2013)], NC facets are atomically bonded, resulting in single-crystalline sheets, which, due to their nanogeometry, have an effective dimensionality below two. We predict electronic structures composed of successive bands formed by strong coupling between the wave functions of nearest-neighbor NCs. This coupling is mainly determined by the number of atoms at the NC bonding plane. The band structures deviate markedly from that of the corresponding two-dimensional (2D) quantum well; the 2D case can be recovered, however, if the effects of the nanogeometry are gradually reduced. The width of the bands can reach hundreds of meV, ascribing highly promising transport properties to square superlattices. The band edges are located at k=0 except for PbSe superlattices, where their position in k space surprisingly depends on the parity of the number of {100} atomic planes in the NCs. Our calculations demonstrate that semiconductors with dimensionality below two have a strong potential for (opto-)electronic, photovoltaic, and spintronic applications.

Published
2013