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In order to increase the solubility of p-terphenyl molecules, their structure was modified with tert-butyl groups. A derivative of p-terphenyl 2,4,4'-tris-tert-butyl-1,1':4',1'-terphenyl was obtained. The new activator was used to obtain polystyrene-based plastic scintillators. The optical and scintillation properties of the obtained plastic scintillators were studied and their ability to n/γ-discrimination was established. [ABSTRACT FROM AUTHOR]

One of the problems in creating a radiation-hard scintillation composition on a polysiloxane base is the search for a radiation-hard activator capable of dissolving in such a base in sufficient quantity. In this work, in order to improve the solubility of p-terphenyl molecules in a polysiloxane base, its structure was modified with tert-butyl substituents. The obtained alkyl derivative of p-terphenyl was used as an activator of polysiloxane-based scintillators. The optical and scintillation properties of the obtained polysiloxane-based scintillators were studied, and their radiation hardness was determined. [ABSTRACT FROM AUTHOR]

The method for determination of f-activity (spontaneous fission) of samples based on a combination of multiplicity spectrometry, measurement of radiation energy, and registration of time of long-range fission products is considered. The method is representative, highly sensitive, and fast. The minimum determined value of the specific activity is 1.4·10−3 Bq/g. [ABSTRACT FROM AUTHOR]

X-ray luminescence and scintillation characteristics of CsPbBr3 crystal from the perovskites family were investigated over the temperature range of 7-200 K. At low temperatures CsPbBr3 was found to be a very bright scintillator with the fast response demonstrating a very short decay time constant 1 ns at 7 K. The light output was measured to be 109 000 ±22 000 ph/MeV at excitation with α-particles of 241Am. The obtained results testify that CsPbBr3 is a very potent scintillation material, which would compete with the commercial analogues in the case of the cryogenic applications. Besides, the study has clarified the origin of the intense slow component observed below 70 K that would be considered an obvious disadvantage for the scintillator applications, since it causes an afterglow. It has been shown that the corresponding radiation is due to the impurities and capture centers. This implies possibility for elimination of the slow component by optimization of the material using an improved growth process. [ABSTRACT FROM AUTHOR]