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Using the envelope function method and parabolic bands model, we study the combined electric and magnetic field and hydrostatic pressure effects on the firts confined electron and hole states in GaAs-(Ga,Al)As quantum wells. In this study the electric field is applied in the growth direction of the heterostructure and the magnetic field is parallel to the interfaces. The energy and the corresponding envelope wave functions are calculated developing these last ones through a selected complete set of trigonometrical functions. In particular, we have calculated the energy of the five lower election and hole states as a function of the electric and magnetic field, the hydrostatic pressure, and the width of the well. Additionally, variations of the aluminum concentration in the barrier region, in the direct gap regime, are taken into account. [ABSTRACT FROM AUTHOR]

By using the Ogg-McCombe effective Hamiltonian and taking into account the effects of the nonparabolicity and anisotropy of the conduction band, the electron states and Landé factor in GaAs- Ga1-xAlxAs quantum wires under applied magnetic fields are obtained. Calculations were carried out both for cylindrical and parabolic quantum wires within the effective-mass approximation, and the applied magnetic field taken along and perpendicular, respectively, to the wire axis. The Schródinger equation corresponding to different projections of the electron spin are solved by an expansion of the electron wave functions in terms of the harmonic-oscillator wave functions. We have also pointed out the importance of taking into account the non-parabolicity and anisotropy of the conduction band for measurements of the effective Landé factor in GaAs-Ga1-xAlxAs quantum well-wires. [ABSTRACT FROM AUTHOR]