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The paper presents the measurement results of optical amplifying characteristics of Er-doped As-S-Ge chalcogenide glasses. The measurements included the amplification of useful laser source power during propagation along two axes of samples. A fluorescence maximum at the wavelengths between 1500 nm and 1540 nm was identified, which corresponds to the transition of electrons from the 4I13/2 level to the 4I15/2 level within the 4f shell of Erbium ions (Er3+). Measuring the signal strength showed that the passage through the erbium doped chalcogenid glass amplification of the useful signal occurs and this increase is proportional to the length of propagation through the doped glass.

The current-voltage characteristics of the bulk metal chalcogenide glassy semiconductor Cu1(AsSe1.4I0.2)99 are obtained by Tektronix 576 Curve Tracer. It was found that this glass has current-controlled negative resistance (CCNR) and switching characteristic with memory. Experimental results have shown a strong decrease in electrical resistivity and threshold voltage due to the presence of the metallic element copper and change of ambient temperature. Also, photomicrographs of the sample surface are presented and the impact of electrical switching on forming crystalline conductive channels on the surface of the investigated amorphous semiconductor is discussed.