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Исследован ионный синтез нанокристаллов InSb в слое захороненного SiO2 структуры кремний-на-изоляторе. Изучены профили распределения атомов индия и сурьмы после отжига при температуре Ta = 500−1100◦C. Установлено, что перераспределение имплантированных атомов имеет немонотонный характер в зависимости от температуры отжига. Формирование нанокристаллов InSb происходит при Ta ≥ 800◦C вблизи границы Si/SiO2 и на глубине средних пробегов Rp. Анализ профилей имплантированных атомов и структуры и распределения по глубине формирующихся нанокристаллов позволил сделать предположение о двухстадийном характере образования фазы InSb: на первой стадии происходит формирование преципитатов сурьмы, которые играют роль зародышей для дальнейшего стока на них атомов In и Sb. The ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure is investigated. The distributions of In and Sb atoms after annealing at a temperature of T a = 500–1100°C are studied. It is established that the redistribution of implanted atoms is unsteadily dependent on the annealing temperature. The formation of InSb nanocrystals occurs at Ta ≥ 800°C near the Si/SiO2 interface and at a depth corresponding to the mean paths R p . Analysis of the profiles of implanted atoms and of the structure and depth distribution of nanocrystals formed allows an inference regarding the two-stage character of formation of the InSb phase. In the initial stage, antimony precipitates are formed; further the precipitates serve as nuclei for indium and antimony to flow to them.

Crystallization of the silicon-on-insulator films implanted with high dose of hydrogen ions was investigated under pulse millisecond annealing. Three-phase structure, consisted of the silicon nanocrystals, amorphous silicon, and hydrogen bubbles, was observed from the as-implanted samples. It was shown that the nanocrystal structure of the films is remained under pulse annealing up to 1000◦C. As pulse annealing temperature was increased, the nanocrystal diameter incrased from 2 to 5 nm, and the naoncrystal fraction rose to 70%. From the analysis of the crystalline-phase growth activation energy, it was speculated about the atomic hydrogen diffusion as limiting factor of the crystallization of the highly-hydrogenated ( 50 at%) silicon films.

issledovanui svoistva germanii, implantirovannovo v sloi SiO2 The properties of germanium implanted into the SiO2 layers in the vicinity of the bonding interface of silicon-on-insulator structures are studied. It is shown that, under conditions of high-temperature (1100 °C) annealing, germanium nanocrystals are not formed, while the implanted Ge atoms segregate at the Si/SiO2 bonding interface. It is established that, in this case, Ge atoms are found at sites that are coherent with the lattice of the top silicon layer. In this situation, the main type of traps is the positive-charge traps; their effect is interpreted in the context of an increase in the surface-state density due to the formation of weaker Ge–O bonds. It is found that the slope of the drain–gate characteristics of the back MIS transistors increases; this increase is attributed to an increased mobility of holes due to the contribution of an intermediate germanium layer formed at the Si/SiO2 interface.

Metodami photolumineszensii, kombinirovannove rassejania i spektroskopii obratnogo rasseania alpha tschastiz issledovano formirovanie zentrov rekombinationnogo uslutschenia pri otschige sloev SiO2, implantirovannich ionami Ge.

Spektri emissii i wosbuschdenia photoluminescencii pri komnatnoi temperature plenok Si3N4 implantirovannich plenok Ge+ i Ar+, issledovanui v savisimosti ot dosui ionov i temperaturui posledujuschego otschiga.

the effect of high temperature high dose nitrogen and aluminium implantation into 6H-SiC is investigated