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1. Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix

Author

Andronova E. V., Baganov Ye. A., and Kurak V. V.

Subjects
low-dimensional structures, indium antimonide, gallium antimonide, liquid phase epitaxy, photoluminescence spectrum, radiative transition, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

Results of investigation of photoluminescence spectrums of the epitaxial structures containing InSb low-dimensional structures formed in GaSb matrix by a method of pulse cooling of saturated solution-melt are presented. It is shown, that observable photoluminescence bands are concerned with radiation transitions through energy levels of InSb low-dimensional structures formed on InSb wetting layer with thickness of 2 nm.

Published
2011

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