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In recent years, advances in optoelectronics and electronics have prioritized optimizing semiconductor device performance and reducing power consumption by modeling new semiconductor device geometries. One such innovative structure is the radial p-n junction structure. In this work, we present a concept that submicron three-dimensional simulations were conducted on radial p-n junction structures based on GaAs material to investigate the influence of temperature ranging from 250K to 500K with a step of 50K on the electrophysical distribution, such as space charge, electro-potential, and electric field, in radial p-n junction structures, as well as various forward voltages. In particular, we focus on the shell radius within the structure: 0.5 μm and 1 μm for the shell. The modeling results were compared with the results obtained from solving the theoretical Poisson equation in the cylindrical coordinate system.