1. Influence of annealing on structure, phase and electrophysical properties of vanadium oxide films
- Author
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T. D. Nguen, A. I. Zanko, D. A. Golosov, S. M. Zavadski, S. N. Melnikov, V. V. Kolos, and T. Q. To
- Subjects
Materials science ,reactive magnetron sputtering ,TK7800-8360 ,Annealing (metallurgy) ,Oxide ,Analytical chemistry ,Vanadium oxide ,microbolometer ,law.invention ,Amorphous solid ,phase composition ,chemistry.chemical_compound ,chemistry ,thin films ,law ,Sputtering ,vanadium oxide ,electrical properties ,annealing ,structure ,Crystallization ,Thin film ,Electronics ,Monoclinic crystal system - Abstract
The aim of this work was to study the effect of the parameters of deposition process and subsequent annealing on the properties of vanadium oxide VO x films deposited by the pulsed reactive magnetron sputtering of a V target in an Ar/O 2 gas mixture. The dependences of the structure, phase, temperature coefficient of resistance (TCR), resistivity p , band gap Egof the films on the oxygen concentration in Ar/O 2 gas mixture during the deposition Г O2 , and the temperature of annealing in an O 2 atmosphere were obtained. The films were found to have an amorphous structure after deposition. Crystallization processes are observed at temperatures above 275 °C. In this case, depending on the temperature, polycrystalline films with a monoclinic, cubic or mixed crystal lattice are formed and a transition occurs from the intermediate oxide V 4 O 9 to the mixed phase VO 2 /VO x /V 2 O 5 and then to the higher oxide V 2 O 5 . The character of changes in p , TCR and Egof films coming from the change in the annealing temperature is complex and largely determined by Г O2 . It was established that with the view of using VO x films as thermosensitive layers, the following conditions of deposition and annealing would be preferable: films deposited at the oxygen concentration 25 % in Ar/O 2 gas mixture and annealed at a temperature of 250–275 °C in an O 2 atmosphere for 10 min. Under these conditions VO x films with the following properties were obtained: p = (1.0 – 3.0) . 10 -2 Ohm . m, TCR = 2.05 %/°C, and E g = 3.76–3.78 eV.
- Published
- 2021