Search

In this study, a high-efficiency, high-power synchronous rectifier based on transistors was designed. The widely used diode-based rectifiers have a relatively simple structure but are unsuitable for high-power applications, such as unmanned aerial vehicle and electric vehicle charging. In contrast, transistor-based rectifiers operate by reversing the power flow of a switch-mode power amplifier from the load to the DC supply based on time-reversal duality and can rectify efficiently, even at a high power of 30 dBm or more. The proposed transistor-based synchronous rectifier was designed to have a high rectification efficiency by controlling the harmonics to operate in the inverse Class-F mode and achieved a peak efficiency of 73.2% at an input power of 37 dBm. [ABSTRACT FROM AUTHOR]

This paper proposes the design of a compact and highly efficient 2.45 GHz rectifier based on harmonic suppression. The proposed rectifier enhanced the RF–DC efficiency by suppressing the second and third harmonics. Additionally, a second harmonic suppression network was used for matching, thereby eliminating the need for an additional input impedance matching network and resulting in a smaller size. The fabricated rectifier demonstrated a very high power conversion efficiency (PCE) of 81.22 % at an input power of 12.5 dBm, with dimensions of 19 mm×15.5 mm. [ABSTRACT FROM AUTHOR]

This paper presents the design and fabrication of a rectenna that receives 2.45 GHz RF signals and converts them into DC power. The rectenna comprises a patch antenna, matching network, and rectifier. It was manufactured and measured using a 0.76-mm thick RF-35A2 board. The matching network was implemented using transmission lines and open stubs and designed to stably convert the RF signal into a fixed DC voltage by employing parallel inductors. The measured rectenna achieved a maximum RF–DC conversion efficiency of 38 % at 2.3-dBm input power and a 1.5-kΩ load. When used in conjunction with the fabricated patch antenna, it transmitted 1.8 V of power at 36 mW into a 90-Ω load at a distance of 10 cm. [ABSTRACT FROM AUTHOR]

In this study, the design and measurement results of a 5.8 GHz GaN HEMT Class-F rectifier using a voltage doubler were proposed. The proposed rectifier employed a voltage doubler for high-output dc voltage characteristics and applied the technique of opening the third-harmonic impedance to an input-matching network to obtain high-efficiency characteristics. A GaN HEMT bare chip with a high breakdown voltage and wide bandgap was used as a diode, which enabled stable operation at a high input power. Four methods of electrically connecting a bare chip to a PCB were proposed, and fabrication and measurements were conducted to verify the optimal electrical connection method. At 5.8 GHz, with an input RF power of 32 dBm and load resistance of 1,000 Ω, the fabricated rectifier exhibited RF-dc conversion efficiency of over 55 % in all methods. Maximum efficiency of 69 % was obtained in a circuit in which the cathodes of series and parallel diodes were connected to the PCB with bond-wires, and the anode of the parallel diode was connected to the PCB with through-wafer via. [ABSTRACT FROM AUTHOR]

A high-efficiency wireless power transfer-receiver IC that can operate at 2.4 GHz has been proposed. The IC consists of a matching network, rectifier, and DC-DC converter. The rectifier based on the Dickson charge pump topology is designed to have high efficiency by optimizing the number of stages and matching networks. In the proposed IC, a high-efficiency CMOS step-up/step-down DC-DC converter that can operate over a wide input range is involved. The converter provides quadruple conversion ratios of 1/3, 1/2, 2/3, and 2/1, which are determined by the mode selector by sensing the input voltage level. The IC was implemented in a standard 28-nm CMOS process, and post-layout simulation results for the IC demonstrated that the rectifier operates at −8 dBm to 20 dBm and shows a maximum efficiency of 66 % for an input power from −4 to 20 dBm. The DC-DC converter outputs a voltage of 1.6∼2.2 V for a wide input voltage range of 1.2∼5 V and shows a power conversion efficiency of up to 80 %. For the entire IC, the maximum efficiency is 50.8 % at an input power of 12 dBm. [ABSTRACT FROM AUTHOR]

In this study, we propose the design and fabrication of a compact ultra-wideband high-efficiency rectifier based on a coupled transmission-line network. The proposed rectifier consists of a coupled transmission-line network and a voltage multiplier that increases the rectified peak voltage. The coupled transmission-line network was optimized to match the input impedance of the voltage multiplier without additional matching components, thus achieving a high power conversion efficiency of over 50 % in the ultra-wideband of 0.2-4.3 GHz. To verify its performance, the proposed rectifier was implemented and measurements were conducted. The dimensions of the implemented rectifier were 16.1 mm × 19.4 mm. The measurement results indicated that the proposed rectifier obtained a PCE of over 70 % in the ultra-wideband of 0.6-2.6 GHz. Furthermore, it achieved a maximum PCE of 74.9 % at 2.45 GHz [ABSTRACT FROM AUTHOR]

In this paper, a high-efficiency rectifier based on a transmission-line transformer with wide input power and frequency ranges is presented. The proposed rectifier was configured with a voltage multiplier and transmission lines connected to each diode. Both the connected transmission lines were coupled and configured in the form of a transformer for a high Q-factor and low insertion loss. Further, the rectifier was optimized to match the source impedance for wide input power and frequency ranges. The size of the proposed rectifier was 34.4 mm × 12.8 mm, and its performance was verified through measurements. The proposed rectifier exhibited a high power conversion efficiency of over 70% in a wide frequency band of 2.0 GHz–2.8 GHz. The rectifier exhibited a power conversion efficiency of 50% or more in the power range of 4.6 dBm–22.8 dBm at a center frequency of 2.45 GHz. [ABSTRACT FROM AUTHOR]

This study presents a highly efficient rectifier based on a matched voltage doubler. The proposed matched voltage doubler consists of a voltage doubler and L-type impedance matching networks connected to each diode. The L-type impedance matching stage can independently control the reactance of each diode, enabling the proposed rectifier to be highly efficient for a wide range of input power and frequency bands. For validation, the proposed rectifier was manufactured, and its performance was measured. The proposed rectifier achieved a power conversion efficiency (PCE) greater than 50 % in a wide frequency band of 1.5 to 2.6 GHz, and in a power range of 10.9 to 31 dBm at 2.4 GHz. The maximum PCE achieved was 71.2 % at 2.4 GHz. [ABSTRACT FROM AUTHOR]

A dual-band(6.78/13.56 MHz) complementary metal-oxide-semiconductor(CMOS) rectifier integrated circuit(IC) for magnetic resonance wireless power transfer(MRWPT) systems is proposed in this study. The proposed rectifier is designed as a comparator-based active diode rectifier to minimize the losses caused by the threshold voltage of the metal-oxide-semiconductor field-effect transistor (MOSFET). The rectifier consists of two comparators: a self-biasing circuit block and cross-coupled PMOSFET s. The power conversion efficiency(PCE) of the rectifier was maximized by eliminating the reverse current of the comparator by controlling the on-off time of the active diode. The rectifier chip was fabricated following Samsung’s 65 nm CMOS process. The results of the simulation showed that the PCE of the rectifier at 6.78/13.56 MHz increased up to 95.5 %. [ABSTRACT FROM AUTHOR]

This paper proposes a rectifier using bootstrapping and active body biasing in 0.11 μm RF CMOS process. The proposed rectifier employs the full-wave rectifying structure with cross coupling and increases the power conversion efficiency by reducing the threshold voltage and leakage current using bootstrapping and active bias biasing. Also, it has been designed to be applied to a wide range of applications from 13.56 MHz used in wireless power transmission to 915 MHz used in RFID. As a measured result, 80 % of power conversion efficiency is obtained when the input power is 0 dBm at 10 kΩ load resistance and 13.56 MHz. Also 40 % of power conversion efficiency is shown in 915 MHz. [ABSTRACT FROM AUTHOR]