1. Resistive Switching Properties of Si-Oxide Thin Films Prepared by RF Sputtering
- Author
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Ohta, A., Goto, Y., Nishigaki, S., Wei, G., Murakami, H., Higashi, S., and Miyazaki, S.
- Subjects
抵抗変化型メモリ（ReRAM） ,Si酸化膜 ,RF Sputtering ,Resistive Random Access Memory（ReRAM） ,Pt Electrode ,Pt電極 ,RFスパッタリング ,Si Oxide - Abstract
RFスパッタにより形成したSiO_x厚さ:8〜40nm)をPt電極で挟んだMIMキャパシタにおいて、電圧掃引による電流変化から抵抗変化動作を評価した。フォーミングと呼ばれる絶縁破壊に類似した初期低抵抗化の後、高抵抗状態(High Resistance State:HRS)と低抵抗状態(Low Resistance State:LRS)を繰り返すノンポーラ型のスイッチングを観測した。SiO_x膜厚が20nm以上の領域では、フォーミング電圧は膜厚に対しほぼ線形に増大し、〜2MV/cmでほぼ一定であった。また、SiO_xを用いたReRAMでは、同様の条件で作成したTiO_xに比べ、ON/OFF比の高い抵抗変化動作を観測した。p型およびn型Si基板上に作製したMOS構造では、n型基板を用いた試料に正電圧印加した場合のみに抵抗変化特性が確認され、Pt/SiO_x界面への電子注入と酸素欠陥により抵抗変化が誘起される可能性が示唆された。, Resistance-switching properties of RF sputtered Si-rich oxides sandwiching with Pt electrodes have been studided in comparison to the TiO_x case. By sweeping bias to the top Pt electrode, non-polar type resistance-switching behavior was observed after a forming process. In SiO_x thickenss region from 20 to 40nm, the electrical field for the forming process was almost constant at 〜2MV/cm. The current levels in both the high resistance state (HRS) and the low resistance state (LRS) for Pt/SiO_x/Pt were markedly smaller than those for the Pt/TiO_x/Pt structure. And, even with decreasing SiO_x thickness down to 〜8nm, the ON/OFF ratio in resistance-switching between HRS and LRS was maintained to be as large as 〜10^3. The current-voltage characteristics for Pt/SiO_x on p-Si(100) and n-Si(100) suggest that the reduction and oxidation reaction induced by electron fluence near the Pt/SiO_x interface is responsible for obtaining the resistance-switching behavior.
- Published
- 2011