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掲載誌: Okada, T., Iwai, K., Hakkaku, T. and Nakazato, K. (2021). The association of lower trunk muscle strength with low back pain in elite lightweight judokas is dependent on lumber spine abnormalities, Isokinetics and Exercise Science, Pre-press: 1–10.

[Abstract] We have studied the efficiency of fission neutrons from the nuclear reactor of Kinki University (UTRKINKI) and X-rays to chromosomes of higher plants for over 20 years. In this review, we described (1) the development of bio-dosimeter using hyper-sensibility of germinating onion roots for irradiation, (2) the analysis of chromosome structure in Haplopappus gracilis (Asteraceae), with the special reference of latent centromeres and survived telomeres throughout chromosomal evolution, (3) the experimental studies on the induction of chromosomal rearrangement in Zebrina pendula (Commelinaceae), (4) the behavior of chromosome fragments with non-localized centromeres in Carex and Eleocharis (Cyperaceae), and (5) the possibility as a bio-dosimeter of pollen mother cells of Tradescantia paludosa (Commelinaceae) for the detection of low-dose radiation.

A new X-ray double incidence method, by which off-angle of crystal surface and the refractive index of the crystal for X-rays are measured exactly, is presented. X-rays which are Bragg-reflected at the first crystal strike both faces of the second crystal, i. e., the surface and the side at the same time. Because of the refractive effect both X-rays propagate in the second crystal in slightly different directions each other. Therefore, the rocking curve which is measured by rotating the second crystal about the axis perpendicular to the incident plane has two peaks. From the angle between two peaks of the rocking curve, off-angle of the surface of the second crystal and the refractive index of the crystal for X-rays are calculated. In order to confirm the exactness of the new method, it is applied to two specimens of GaAs crystal. One is Cr-doped SI- GaAs with the surface offed by 2±0.5°in [01^^-1^^] direction from (100) plane and another is Si-doped n- GaAs with the surface offed by 3±0.5°in [001^^] direction from (100) plane. The measured off-angles of these specimens are 2.211°and 2.987°, respectively. The measured values of refractive index of these specimens are 0.99998493 and 0.99998361. They agree well with the value given by the lorentz dispersion formula, 0.99998492., 紀要論文

A new X-ray double incidence method, by which off-angle of crystal surface and the refractive index of the crystal for X-rays are measured exactly, is presented. X-rays which are Bragg-reflected at the first crystal strike both faces of the second crystal, i. e., the surface and the side at the same time. Because of the refractive effect both X-rays propagate in the second crystal in slightly different directions each other. Therefore, the rocking curve which is measured by rotating the second crystal about the axis perpendicular to the incident plane has two peaks. From the angle between two peaks of the rocking curve, off-angle of the surface of the second crystal and the refractive index of the crystal for X-rays are calculated. In order to confirm the exactness of the new method, it is applied to two specimens of GaAs crystal. One is Cr-doped SI- GaAs with the surface offed by 2±0.5°in [01^^-1^^] direction from (100) plane and another is Si-doped n- GaAs with the surface offed by 3±0.5°in [001^^] direction from (100) plane. The measured off-angles of these specimens are 2.211°and 2.987°, respectively. The measured values of refractive index of these specimens are 0.99998493 and 0.99998361. They agree well with the value given by the lorentz dispersion formula, 0.99998492.