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A high power and high gain packaged power MMIC module f r Ka-band applicati ns perating under a single polarity bias supply has been developed for the first time.This PA module consists f tw pseudomorphic HEMT MMICs,with Lg=0.25um,packaged in a single power module. These MMICs operate without a gate bias control v ltage when the gate bias is shunted in the package. This PA module pr vides 30dBm utput p wer and approximately 30dB of gain in the 27-31GHz range. The single bias supply perati n pr vides significant cost advantage to the device manufacture as well as the end user since there is no need to design a gate contr l bias network.

A high efficiency 1.4 W MMIC power in the K-Band frequency band has been developed. A process technology optimized for high efficiency performance and an accurate design technique allowed us to achieve a power added efficiency of 42% with good noise power ratio figure. These performance make this device suitable for K-Band commercial satellite systems as part of antenna element array.

A three stages GaAs MMIC power amplifier in MESFET Technology for point to point radio application that delivers an output power greater than 125 mW, with associated gain higher than 19 dB has been developed. The use of bias feed bonding wires as tuning element has been exploited to shorten the design cycle time and to optimize the circuit performance in the desired frequency bandwidth. The device has a power added efficiency greater than 15% at 1 dB of compression in the frequency bandwidth from 21.2 to 23.6 GHz. A pilot test for production has demonstrated the repetitivity of the good performance and the device has been accepted for large volume production after the first design cycle.