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Your search keyword '"Lin, Kun"' showing total 2 results
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2 results on '"Lin, Kun"'

1. Compact W-band SPQT MMIC switch using traveling wave concept

Author

Chao, Shih-Fong, Tsai, Zuo-Min, Lin, Kun-You, and Wang, Huei

Subjects
ING-INF/01 Elettronica
Abstract

A high performance W-band single-pole-quadruple-throw(SPQT) switch with a compact chip size using GaAs HEMT is demonstrated. This SPQT switch has a measured insertion loss of 3.9-5.5 dB and isolation higher than 30 dB from 70 to 102 GHz. A minimum insertion loss of 3.9dBwith isolation higher than 30dB was measured at 90 GHz.

Published
2005

2. Investigation of InGaP/GaAs multiple negative-differential-resistance (NDR) device prepared by MOCVD

Author

Liu, Wen-Chau, Tsai, Jung-Hui, Thei, Kong-Beng, Lin, Kun-Wei, Cheng, C. C., and Chen, H. R.

Subjects
ING-INF/01 Elettronica, Physics::Accelerator Physics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Abstract

An interesting multiple S-shaped negative-differential-resistance (NDR) phenomenon is observed for an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) under the inverted operation mode. This behavior is resulted from a sequential avalanche multiplication and two-stage barrier lowering effect. Under normal operation mode, a typical common-emitter current gain of 60 is obtained at collector current density of 400A/cm2 for the studied HEBT without emitter-edge thinning structure.

Published
1996

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