1. SiC and GaN Based Transistor and Circuit Advances
- Author
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Palmour, J.W., Milligan, J.W., Henning, J., Allen, S.T., Ward, A., Parikh, P., Smith, R.P., Saxler, A., Moore, M., and Wu, Y.
- Subjects
ING-INF/01 Elettronica - Abstract
Significant progress has been made in the development of SiC MESFETs and MMIC power amplifiers manufactured on 3-inch high purity semiinsulating (HPSI) 4H-SiC substrates. Wide bandwidth circuits using both 10 Watt and 60 watt MESFETs are presented. These MESFETs show no degradation after RFHTOL at a baseplate of 90°C for 4000 hours. High power SiC MMIC amplifiers are shown with excellent yield and repeatability using a released foundry process. GaN HEMTs on HPSI SiC are reported with >30 W/mm RF output power density, and 10 GHz PAE of 72% is also demonstrated for lower voltage devices. Finally, a GaN HEMT operating life of over 500 hours at a TJ =160°C is also reported.
- Published
- 2004