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1. Reduced short channel effects in selectively dry gate recessed P-doped buffered pseudomorphic HEMTs

Author

Cameron, N., Asenov, A., Ferguson, S., Taylor, M.R.S., Holland, M., and Beaumont, S. P.

Subjects
ING-INF/01 Elettronica
Abstract

We report both on the design by numerical simulation of pseudomorphic HEMTs with p-doped and undoped buffer layers and on their fabrication. We report that the p-buffer helps to reduce short channel effects in scaled 100 nm devices. To the authors' knowledge this is the first time that the application of p-doped buffer layers to HEMTs has been demonstrated.

Published
1994

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