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Under various power ratios and temperatures, Inxga1-xN films with different indium composition x were grown on Si(111) substrates by reactive magnetron sputtering, and then annealed at ammonia atmosphere around 700°C for 2 hours. The indium composition x can be adjusted by the growth temperature over the range of 600~800°C. There is no InN phase and In droplet formation in the Inxga1-xN films due to the low-temperature advantages of reactive magnetron sputtering. The rich In composition in Inxga1-xN films is caused by the higher sputtering yield of In2O3 target than Ga2O3 target. Raman scattering analysis revealed that the Inxga1-xN films obtained at different temperatures were wurtzite structure, and the compositional inhomogeneity is caused by the relaxation of momentum conservation and increase of lattice disorder.