1. Progress in Contacting a-Si:H/c-Si Heterojunction Solar Cells and its Application to Interdigitaded Back Contact Structure
- Author
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Desrues, T., Ribeyron, P.-J., Vandenheynde, A., Ozanne, S., Munoz, D., Souche, F., Denis, C., Heslinga, D., Diouf, Djicknoum, Kleider, Jean-Paul, Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), and Schneegans, Olivier
- Subjects
010302 applied physics ,ComputingMilieux_MANAGEMENTOFCOMPUTINGANDINFORMATIONSYSTEMS ,020209 energy ,0103 physical sciences ,ComputerSystemsOrganization_COMPUTER-COMMUNICATIONNETWORKS ,0202 electrical engineering, electronic engineering, information engineering ,Mono- and Multicrystalline Silicon Materials and Cells ,02 engineering and technology ,InformationSystems_MISCELLANEOUS ,Wafer-based Silicon Solar Cells and Materials Technology ,01 natural sciences ,7. Clean energy ,ComputingMilieux_MISCELLANEOUS - Abstract
24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 2202-2205, This work presents our progress in designing the rear emitter of a-Si:H / c-Si (n) heterojunctions solar cells (Si-HJ). We study the emitter saturation current density (J0e) of p-type a-Si:H layers and show that it greatly depends on the layer thickness and conductivity. Different p-type a-Si:H emitters are tested experimentally on Rear Emitter (RE) as well as Interdigitated Back Contact (IBC) Si-HJ devices. A low conductivity (1.4x10-6 S.cm-1) layer allows the better Voc values about 650 mV but causes resistive losses on both types of solar cells. For the IBC devices, a low emitter contact fraction induces not only fill factor (FF) losses but also a decrease of the short circuit current (Jsc) value. By optimizing the rear side geometry an efficiency of 12.7% is achieved for the Si-HJ IBC structure on 25 cm2 n-type substrate.
- Published
- 2009