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In this paper, inspired from the technique of patch–aperture–patch, a novel tri-band frequency selective surface with second-order band-pass response in each operation band is presented. The design is implemented by cascading a two-dimensional periodic array of three square loops and an array of wire grids. The proposed structure composed of three metal and two dielectric layers acts as a spatial dual band microwave filter with large band separation. The predicted FSS has the merits of broadband response, excellent stability for different incident angles, and sharp roll-off at X-, Ku- and K-band, respectively. The simulation and measurement are carried out and discussed. The measured results agree well with the simulated ones.

A novel n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has been studied in the paper. The performance of the device is simulated using Silvaco Atlas tools, which indicates excellent performances of the device in both blocking state and conducting state. The device also has a good switching characteristic with 0.54μs as rising time and 0.66μs as falling time. With the charge compensation layer, the breakdown voltage and the spectral response intensity of the device are improved by 90V and 33A/W respectively. Compared with optically controlled transistor without charge compensation layer, the n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has a better performance.