1. Caractérisation au-dessous du seuil de doubles hétérostructures lasers GaInAsSb/GaAlAsSb émettant vers 2,37 μm
- Author
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C. Fouillant, J.L. Leclercq, Guilhem Boissier, P. Martin, A. M. Joullié, P. Grunberg, S. Sadik, Jean-Louis Lazzari, André Joullié, Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), and Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Laser diode ,Auger effect ,business.industry ,Chemistry ,General Engineering ,General Physics and Astronomy ,Laser ,01 natural sciences ,010305 fluids & plasmas ,law.invention ,Semiconductor laser theory ,symbols.namesake ,Wavelength ,Laser linewidth ,Optics ,law ,[PHYS.HIST]Physics [physics]/Physics archives ,0103 physical sciences ,symbols ,Optoelectronics ,business ,Diode ,Non-radiative recombination - Abstract
Planar stripe gain-guided laser diodes have been prepared from Ga 0.77 In 0.23 As 0.20 Sb 0.80 /Ga 0.53 Al 0.47 As 0.04 Sb 0.96 double-heterostructures grown by liquid phase epitaxy on GaSb (100) oriented. The emission wavelength is 2.1 μm at 80 K (in continuous mode) and 2.37 μm at 292 K (in pulsed mode) with threshold current ≃265 mA at 80 K and 4 A at room temperature. The analysis of the spontaneous emitted power versus the injection current allowed us at 292 K to determine, in the case of low injection, the non radiative lifetime that accounts for non radiative recombination via levels in the bulk of the active region and at the interfaces τ nr ≃4-5 ns, and for higher injection the Auger recombination coefficient C≃1.1×10 -28 cm 6 /s. A study of the optical gain from the emitted wavelength spectra gave us the linewidth enhancement factor of the laser diode α≃3.8±1.3 at the lasing wavelength at 80 K
- Published
- 1993