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2. Correction: CEPC Technical Design Report: Accelerator

4. Electrical and structural analysis of GaN/ZnO/Ga2O3 bonded interfaces; observation of spinel ZnGa2O4 after annealing.

45. High-frequency performance in nanoscale vacuum channel transistors with gate-cathode height difference.

46. (010) β-(Alx, Ga1−x)2O3 growth using tritertiarybutylaluminum as Al gas precursor via hybrid molecular beam epitaxy.

47. A new split-ring protoilludane-type sesquiterpenoid and prenylated aromatic compounds from Coriolopsis trogii.

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