161 results on '"Zavarin, E. E."'
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2. A GaN/AlGaN Resonance Bragg Structure
3. Critical Disorder in InGaN/GaN Resonant Bragg Structures
4. Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells
5. The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE
6. Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells
7. Insulating GaN Epilayers Co-Doped with Iron and Carbon
8. Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
9. The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
10. Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure.
11. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
12. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
13. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
14. Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure.
15. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
16. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
17. Elastic strains and delocalized optical phonons in AlN/GaN superlattices
18. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
19. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
20. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
21. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
22. The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy
23. MOVPE of III-N LED structures with short technological process
24. Optical lattices of excitons in InGaN/GaN quantum well systems
25. The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
26. Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers
27. X-ray diffraction study of short-period AlN/GaN superlattices
28. Resonance Bragg structure with double InGaN quantum wells
29. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
30. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
31. InGaN/GaN heterostructures grown by submonolayer deposition
32. Monolithic white LEDs: Approaches, technology, design
33. Specific features of gallium nitride selective epitaxy in round windows
34. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them
35. Study of tunneling transport of carriers in structures with an InGaN/GaN active region
36. Formation of composite InGaN/GaN/InAlN quantum dots
37. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
38. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
39. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
40. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
41. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
42. Indium-rich island structures formed by in-situ nanomasking technology
43. Optical and X-ray diffraction studies of multilayer structures based on InGaN/GaN solid solutions
44. Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers
45. Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs
46. Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen
47. Energy characteristics of excitons in structures based on InGaN alloys
48. Critical spatial disorder in InGaN resonant Bragg structures.
49. Photoluminescence of localized excitons in InGan quantum dots
50. Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots
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