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A new type of optimized riser structure was proposed, in which a low-emissivity board was inserted into the hollow interlayer of the material to increase the yield of the steel ingot. The insulation effect of different riser heights on the solidification process of steel ingot is numerical simulated. The results show that when the riser height can be reduced from 350 mm to 300 mm, the ingot yield can be increased by 1,92 %. As the number of low-emissivity boards is increases, the riser insulation performance is also increased.

The electron spin resonance methodology is employed to explain the formation, as well as the conversion of the defect centers present in the low water peak single mode optical fibers, which are normally irradiated by the gamma rays. The observed defect centers are shown to completely disappear with an increase in the doses of irradiation.

Electrical transport properties of p-type ZnO:N films grown by thermal activation of the nitrogen dopant were investigated via the temperature-dependent Hall effect. The Hall mobility increases with decreasing temperature. Varied scattering mechanisms have been analysed including lattice vibration scattering, ionized impurity scattering and dislocation scattering. A fit of the theory to temperature-dependent hole mobility experimental data in p-type ZnO:N films gives dislocation densities in the order of 1012cm?2. The analysis shows dislocation scattering is indeed important for the p-type ZnO films grown on the mismatched substrate. The thermal ionization energy of the nitrogen acceptor is estimated to be 170 meV in terms of the temperature-dependent hole concentration. On the other hand, the emission related to the acceptors is observed in PL spectra. [ABSTRACT FROM AUTHOR]