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Your search keyword '"Wahl, Jeremy A."' showing total 4 results
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4 results on '"Wahl, Jeremy A."'

1. Multiple-fluorophore-specie detection with a tapered Fabry-Perot fluorescence spectrometer

Author

Wahl, Jeremy A., Van Delden, Jay S., and Tiwari, Sandip

Subjects
Optics -- Research, Fluorescence -- Research, Algorithms -- Research, Algorithms -- Technology application, Algorithm, Technology application, Astronomy, Physics
Abstract

A novel fluorescence spectrometer and method for the simultaneous detection of multiple-fluorophore species in a no-moving-parts, instantaneous manner is described. In the reported embodiment of the instrument, a tapered Fabry-Perot filter is used to spatially encode the fluorescence spectrum from a multiple-dye-containing test sample. Using a pseudoinverse reconstruction algorithm, we spectrally decode the particle concentration for each dye specie in the test sample. Experimental results are reported along with a theoretical treatment of the method.

Published
2005

3. Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing.

Author

Itokawa, Hiroshi, Berliner, Nathaniel C., Teehan, Sean, Wall, Donald R., Wahl, Jeremy A., Kim, Eunha, Li, Juntao, Demarest, James J., Ronsheim, Paul, and Paruchuri, Vamsi

Abstract

Formation of heavy C and/or P doping Si alloy with a strain and/or low resistivity in FinFET S/D having only {110} plane on fin sidewall poses a challenge because, if the CVD selective epitaxy typically used in recent S/D process integration is employed, it is extremely difficult to grow heavily doped Si alloys with defect-free microstructure on {110} crystallographic plane. We propose the combination of cryogenic ion-implant amorphization followed by nonmelt laser annealing regrowth for both strained C-incorporated Si solid-phase epitaxy and improvement of P-activation in heavily P-doped Si alloy epitaxially grown film, while annihilating defects. In this paper, the diffusion and the activation of C atoms and P atoms in Si with C additive are investigated for different nonmelt laser annealing conditions. Additionally, the influence of cryogenic implantation of Si+ into amorphized P-doped Si epitaxial layer followed by nonmelt laser annealing recystallization on the diffusion and activation of P atoms in Si is discussed. [ABSTRACT FROM PUBLISHER]

Published
2012
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4. Lack of charge offset drift is a robust property of Si single electron transistors.

Author

Hourdakis, Emmanouel, Wahl, Jeremy A., and Zimmerman, Neil M.

Subjects
*SILICON, *TRANSISTORS, *ELECTRONS, *PHASE transitions, *OXIDES
Abstract

One of the challenges that single-electron transistors (SETs) face before they can be considered technologically useful is the charge offset drift. Recently, two different types of Si SETs were shown to have a drift of only 0.01e (the fundamental charge) over several days. Those devices came from one fabrication source. Here, we present the results for Si SETs fabricated by our group (a different source) demonstrating their operation as SETs. We confirm that the charge offset drift is less than 0.01e, demonstrating the lack of charge offset drift is generic to Si devices and not dependent on the fabrication source. [ABSTRACT FROM AUTHOR]

Published
2008
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