113 results on '"Volovik, B. V."'
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2. The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm
3. Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range
4. Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots
5. InAs Nanostructures in a Silicon Matrix: Growth and Properties
6. Mbe Growth, Structural and Optical Characterization of InAs/InGaAlAs Self-Organized Quantum Dots
7. MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots
8. Effect of growth conditions on InAs nanoislands formation on Si(100) surface
9. Heteroepitaxial growth of InAs on Si: A new type of quantum dot
10. Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
11. Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures
12. Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition
13. InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm
14. Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
15. Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix
16. Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates
17. Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix
18. Effect of the quantum-dot surface density in the active region on injection-laser characteristics
19. Formation of InSb quantum dots in a GaSb matrix
20. Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
21. Lateral association of vertically coupled quantum dots
22. Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures
23. Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures
24. 1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots
25. Optical properties of submonolayer germanium clusters formed by molecular-beam epitaxy in a silicon matrix
26. Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3–1.4 μm wavelength range
27. Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 μm
28. Long-wavelength emission in InGaAsN/GaAs heterostructures with quantum wells
29. Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface
30. Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm
31. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement
32. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region
33. Photoluminescence of InSb quantum dots in GaAs and GaSb matrices
34. Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 μm Range
35. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm
36. Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement
37. Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiency.
38. Reversibility of the island shape, volume and density in Stranski-Krastanow growth.
39. Optical and structural properties of self-organized InGaAsN/GaAs nanostructures.
40. Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3μm Wavelength Range.
41. Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
42. 1.55–1.6μm Electroluminescence of GaAs Based Diode Structures with Quantum Dots.
43. Photoluminescence from Multilayer InAs/GaAs Structures with Quantum Dots in the 1.3–1.4μm Wavelength Range.
44. Hole and electron emission from InAs quantum dots.
45. Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 um
46. Optical and structural properties of Ge submonolayer nano-inclusions in a Si matrix grown by molecular beam epitaxy.
47. Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells.
48. Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures.
49. Long-wavelength quantum dot lasers on GaAs substrates.
50. 1.3-1.4 µm photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates.
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