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24 results on '"Van Den Daele, W."'

7. Reliability of ultrathin buried oxides for multi-VT FDSOI technology

Author

Besnard, G., Garros, X., Nguyen, P., Andrieu, F., Reynaud, Pascal, Van Den Daele, W., Bourdelle, K.K., Schwarzenbach, W., Reimbold, G., Cristoloveanu, S., Silicon-on-Insulator Technologies (SOITEC), Parc Technologique des Fontaines, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de santé des végétaux (LSV Angers), Laboratoire de la santé des végétaux (LSV), Agence nationale de sécurité sanitaire de l'alimentation, de l'environnement et du travail (ANSES)-Agence nationale de sécurité sanitaire de l'alimentation, de l'environnement et du travail (ANSES), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), ISEP, Laboratoire de la Santé des Végétaux, and Agence nationale de sécurité sanitaire de l'alimentation, de l'environnement et du travail (ANSES)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

Section 3: SOI MOSFETs - Devices and Technology; International audience

Published
2013

8. Demonstration of A2RAM memory cells fabricated by ion implantation

Author

Marigo, L., Rodriguez, N., Navarro, C., Gamiz, F., Van Den Daele, W., Allibert, F., Cristoloveanu, S., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Silicon-on-Insulator Technologies (SOITEC), Parc Technologique des Fontaines, Spanish government projects TEC-2011-28660, TIC-2010-6209, BioTIC and financial support of the OTRI-UGR., and Rasolofoniaina, Brigitte

Subjects
Hardware_MEMORYSTRUCTURES, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Hardware_INTEGRATEDCIRCUITS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Hardware_LOGICDESIGN
Abstract

Section 7: Circuits et memories; International audience

Published
2013

9. Selected SOI puzzles and tentative answers

Author

Na, K.-I., Van Den Daele, W., Pham-Nguyen, L., Bawedin, M., Park, K.-H., Wan, J., Tacchi, K., Chang, S.-J., Ionica, I., Bae, Y.-H., Chroboczek, J.-A., Fenouillet-Beranger, C., Ernst, T., Augendre, E., Le Royer, C., Zaslavsky, A., Iwai, H., Cristoloveanu, S., Domenget, Chahla, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2010

10. Low-temperature measurements on Germanium-on-Insulator pMOSFETs: evaluation of the background doping level

Author

Van Den Daele, W., Augendre, E., Cristoloveanu, S., Le Royer, C., Clavelier, L., Damlencourt, J.-F., Guiot, E., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Domenget, Chahla, and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2009

11. Advanced pMOSFET on germanium-on-insulator : low temperature properties

Author

van den Daele, W., Cristoloveanu, S., Augendre, E., Le Royer, C., Clavelier, L., Damlencourt, J.-F., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Domenget, Chahla, and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2009

12. Advanced GeOI structures: from material properties to high performance pMOSFETs

Author

van den Daele, W., Augendre, E., Clavelier, L., Guiot, E., Allibert, F., Cristoloveanu, S., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Domenget, Chahla

Subjects
[PHYS.COND.CM-GEN] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2008

13. Characterization of Silicon-On-Insulator films with pseudo metal-oxide-semiconductor field-effect transistor: correlation between contact pressure, crater morphology and series resistance

Author

Savin, I., Ionica, I., Van Den Daele, W., Nguyen, T., Mescot, X., Cristoloveanu, S., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Domenget, Chahla

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2008

16. ADVANCED SOLUTIONS FOR MOBILITY ENHANCEMENT IN SOI MOSFETS.

Author

PHAM-NGUYEN, L., FENOUILLET-BERANGER, C., PERREAU, P., DENORME, S., GHIBAUDO, G., FAYNOT, O., SKOTNICKI, T., OHATA, A., CASSE, M., IONICA, I., VAN DEN DAELE, W., PARK, K-H., CHANG, S-J., BAE, Y-H., BAWEDIN, M., and CRISTOLOVEANU, S.

Subjects
METAL oxide semiconductor field-effect transistors, SILICON-on-insulator technology, ELECTRON mobility, PERFORMANCE evaluation, TECHNOLOGICAL innovations, DIELECTRICS, ELECTRON transport, SEMICONDUCTOR defects
Abstract

SOI technology offers ample room for scaling, performance improvement, and innovations. The current status is reviewed by focusing on several technological options for boosting the transport properties in SOI MOSFETs. The impact of series resistance, high-K dielectrics, and metal gate in advanced transistors is discussed. Carrier mobility measurements as a function of channel length and temperature reveal the beneficial effect of strain, mitigated however by various types of defects. The experimental data is exclusively collected from state-of-the-art, ultrathin body, fully depleted MOSFETs. Simple models are presented to clarify the mobility behavior. [ABSTRACT FROM AUTHOR]

Published
2011
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19. Adaptation of the pseudo-metal-oxide-semiconductor field effect transistor technique to ultrathin silicon-on-insulator wafers characterization: Improved set-up, measurement procedure, parameter extraction, and modeling.

Author

Van Den Daele, W., Malaquin, C., Baumel, N., Kononchuk, O., and Cristoloveanu, S.

Subjects
*METAL oxide semiconductors, *SEMICONDUCTORS, *FIELD-effect transistors, *FIELD-effect devices, *SILICON
Abstract

This paper revisits and adapts of the pseudo-MOSFET (Ψ-MOSFET) characterization technique for advanced fully depleted silicon on insulator (FDSOI) wafers. We review the current challenges for standard Ψ-MOSFET set-up on ultra-thin body (12 nm) over ultra-thin buried oxide (25 nm BOX) and propose a novel set-up enabling the technique on FDSOI structures. This novel configuration embeds 4 probes with large tip radius (100-200 μm) and low pressure to avoid oxide damage. Compared with previous 4-point probe measurements, we introduce a simplified and faster methodology together with an adapted Y-function. The models for parameters extraction are revisited and calibrated through systematic measurements of SOI wafers with variable film thickness. We propose an in-depth analysis of the FDSOI structure through comparison of experimental data, TCAD (Technology Computed Aided Design) simulations, and analytical modeling. TCAD simulations are used to unify previously reported thickness-dependent analytical models by analyzing the BOX/substrate potential and the electrical field in ultrathin films. Our updated analytical models are used to explain the results and to extract correct electrical parameters such as low-field electron and hole mobility, subthreshold slope, and film/BOX interface traps density. [ABSTRACT FROM AUTHOR]

Published
2013
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20. Characterization of silicon-on-insulator films with pseudo-metal-oxide-semiconductor field-effect transistor: Correlation between contact pressure, crater morphology, and series resistance.

Author

Ionica, I., Savin, I., Van Den Daele, W., Nguyen, T., Mescot, X., and Cristoloveanu, S.

Subjects
METAL oxide semiconductor field-effect transistors, SEMICONDUCTOR wafers, ATOMIC force microscopy, ELECTRONIC probes, SILICON
Abstract

Pseudo-metal-oxide-semiconductor field-effect transistor (Ψ-MOSFET) is a simple and efficient technique for characterizing electrical properties of silicon-on-insulator wafers. The primary condition for reliable parameter extraction is to achieve ohmic contacts between Ψ-MOSFET probes and silicon film. This paper brings experimental arguments on the probe-pressure impact on contact nature, series resistance, and carrier mobility. The specificity of our study consists of the topographical analysis (by atomic force microscopy) of craters induced by the probes. We correlate the probe-pressure with morphology parameters (size of craters) and electrical parameters (series resistance, mobility). For higher pressures, contacts are improved, changing from Schottky-like to ohmic-like. [ABSTRACT FROM AUTHOR]

Published
2009
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23. Reliability of ultra-thin buried oxides for multi-VT FDSOI technology.

Author

Besnard, G., Garros, X., Nguyen, P., Andrieu, F., Reynaud, P., Van Den Daele, W., Bourdelle, K.K., Schwarzenbach, W., Toffoli, A., Kies, R., Delprat, D., Reimbold, G., and Cristoloveanu, S.

Subjects
*SILICON-on-insulator technology, *OXIDES, *ELECTRIC breakdown, *RELIABILITY in engineering, *ELECTRIC capacity
Abstract

Highlights: [•] Adapt reliability methods to evaluate the degradation of UTBOX. [•] Study the carrier trapping and defects generation for breakdown in SOI technology. [•] Evaluate the quality and lifetime of buried oxides for back-bias applications. [Copyright &y& Elsevier]

Published
2014
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24. The spectre of coercion: is public health genetics the route to policies of enforced disease prevention?

Author

van den Daele W

Subjects
Abortion, Eugenic, Child, Employment, Genetic Testing legislation & jurisprudence, Humans, Infant, Newborn, Marriage, Patient Compliance, Primary Prevention economics, Coercion, Genetic Testing ethics, Genetics, Medical legislation & jurisprudence, Primary Prevention methods, Public Health
Abstract

The paper discusses options for disease prevention in Public Health Genetics and attempts to assess the probability that coercive strategies might be chosen in public health policies that impose duties to undergo genetic testing. Given the social values, legal and political cultures and professional orientations in Western Europe and the United States, which provide the terms of reference for this assessment, it is unlikely that the preventive options which might emerge from human genetics in the future will trigger policies that force preventive behavior upon people, except in the cases where such enforcement is designed to protect third parties., (Copyright (c) 2006 S. Karger AG, Basel.)

Published
2006
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