1. Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes
- Author
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V. J. Raposo, Christophe Gaquiere, E. Perez-Martin, Tomas Gonzalez, Ignacio Iniguez-de-la-Torre, D. Vaquero, Javier Mateos, H. Sanchez-Martin, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Spanish MINECO, FEDEREuropean Commission [SA254P18, TEC2017-83910-R], Junta de Castilla y LeonJunta de Castilla y Leon, and Ministry of Science and Innovation (Ministry of Universities)
- Subjects
Imagination ,Materials science ,microwave detection ,media_common.quotation_subject ,Bioengineering ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,7. Clean energy ,Impedance measurements ,GaN ,Responsivity ,[SPI]Engineering Sciences [physics] ,General Materials Science ,Electrical and Electronic Engineering ,Self-switching diode ,Trapping effects ,Electrical impedance ,Diode ,media_common ,business.industry ,Mechanical Engineering ,Relaxation (NMR) ,impedance measurements ,General Chemistry ,Atmospheric temperature range ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Mechanics of Materials ,Microwave detection ,Optoelectronics ,trapping effects ,0210 nano-technology ,business ,Microwave ,Voltage - Abstract
[EN]The zero-bias microwave detection capability of self-switching diodes (SSDs) based on AlGaN/GaN is analyzed in a wide temperature range, from 10 K to 300 K. The measured responsivity shows an anomalous enhancement at low temperature, while the detected voltage exhibits a roll-off in frequency, which can be attributed to the presence of surface and bulk traps. To gain a deep insight into this behavior, a systematic DC and AC characterization of the diodes has been carried out in the mentioned temperature range. DC results confirm the existence of traps and AC measurements allow us to identify their properties. In particular, impedance studies enable to distinguish two types of traps: at the lateral surfaces of the channel, with a wide spread of relaxation times, and in the bulk., Spanish MINECO and FEDER through project TEC2017-83910-R and the Junta de Castilla y León and FEDER through project SA254P18.
- Published
- 2020