1. Positive gate bias stress instability of carbon nanotube thin film transistors.
- Author
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Lee, Sang Won, Lee, Si Young, Lim, Seong Chu, Kwon, Young-dong, Yoon, Joo-Sun, Uh, Keehan, and Lee, Young Hee
- Subjects
CARBON nanotubes ,THIN film transistors ,STRAINS & stresses (Mechanics) ,SILICON oxide ,HAFNIUM oxide - Abstract
The effect of positive gate bias stress (PGBS) on random network carbon nanotube-thin film transistor (CNT-TFT) stability on SiO2 and HfO2 oxides was investigated with different gate bias stresses and times. CNT-TFTs showed a logarithmic positive threshold voltage shift (ΔVth) with time for a PGBS, following a stretched exponential model. Although the saturated ΔVth was larger on SiO2 than on HfO2, CNT device using SiO2 gate insulator recovered their original characteristics after removal of the stress at room temperature without additional thermal and bias annealing. The CNT-TFTs were found to be more tenable than conventional Si devices against PGBS. [ABSTRACT FROM AUTHOR]
- Published
- 2012
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